Characterizations of a Selenized Cu(In                         1-x                         Ga                         x                         )Se                         2                          Thin Film Absorber Layer Fabricated by a Three-Stage Hybrid Method

A. Ashok; J. S. Narro-Rios; O. Nwakanma; G. Regmi; S. Velumani; F. A. Pulgarin-Agudelo

doi:10.1109/ICEEE.2018.8533902

Characterizations of a Selenized Cu(In _1-x Ga _x )Se ₂ Thin Film Absorber Layer Fabricated by a Three-Stage Hybrid Method

A. Ashok, J. S. Narro-Rios, O. Nwakanma, G. Regmi, S. Velumani, F. A. Pulgarin-Agudelo

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

6 Citas (Scopus)

Resumen

The photovoltaic technology has remained one of the favored green technologies to meet the today's energy production demand with the solar cell offering a means of tapping into this source of energy. In this study, the 3-stage hybrid (3SH) method was employed consisting of spray pyrolysis and thermal evaporation to deposit the quaternary copper indium gallium diselenide (CIGSe) thin film solar cell absorber layer. The choice of CIGSe semiconductor for the solar cell application stems from some of the desirable qualities which include direct and variable energy bandgap (1.04-1.65 eV), high absorption coefficient (≈10 ⁵ cm ^-1 ) and stability. The as-deposited films were selenized to complete the fabrication of the CIGSe absorber layer. The films were characterized for the structural, morphological and electrical properties using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), and Hall measurements.

Idioma original	Inglés
Título de la publicación alojada	2018 15th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2018
Editorial	Institute of Electrical and Electronics Engineers Inc.
ISBN (versión digital)	9781538670323
DOI	https://doi.org/10.1109/ICEEE.2018.8533902
Estado	Publicada - 13 nov. 2018
Publicado de forma externa	Sí
Evento	15th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2018 - Mexico City, México Duración: 5 sep. 2018 → 7 sep. 2018

Serie de la publicación

Nombre	2018 15th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2018

Conferencia

Conferencia	15th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2018
País/Territorio	México
Ciudad	Mexico City
Período	5/09/18 → 7/09/18

ODS de las Naciones Unidas

Este resultado contribuye a los siguientes Objetivos de Desarrollo Sostenible

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10.1109/ICEEE.2018.8533902

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Ashok, A., Narro-Rios, J. S., Nwakanma, O., Regmi, G., Velumani, S., & Pulgarin-Agudelo, F. A. (2018). Characterizations of a Selenized Cu(In _1-x Ga _x )Se ₂ Thin Film Absorber Layer Fabricated by a Three-Stage Hybrid Method En 2018 15th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2018 Artículo 8533902 (2018 15th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEEE.2018.8533902

Ashok, A. ; Narro-Rios, J. S. ; Nwakanma, O. et al. / Characterizations of a Selenized Cu(In _1-x Ga _x )Se ₂ Thin Film Absorber Layer Fabricated by a Three-Stage Hybrid Method 2018 15th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2018. Institute of Electrical and Electronics Engineers Inc., 2018. (2018 15th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2018).

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title = " Characterizations of a Selenized Cu(In 1-x Ga x )Se 2 Thin Film Absorber Layer Fabricated by a Three-Stage Hybrid Method ",

abstract = " The photovoltaic technology has remained one of the favored green technologies to meet the today's energy production demand with the solar cell offering a means of tapping into this source of energy. In this study, the 3-stage hybrid (3SH) method was employed consisting of spray pyrolysis and thermal evaporation to deposit the quaternary copper indium gallium diselenide (CIGSe) thin film solar cell absorber layer. The choice of CIGSe semiconductor for the solar cell application stems from some of the desirable qualities which include direct and variable energy bandgap (1.04-1.65 eV), high absorption coefficient (≈10 5 cm -1 ) and stability. The as-deposited films were selenized to complete the fabrication of the CIGSe absorber layer. The films were characterized for the structural, morphological and electrical properties using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), and Hall measurements.",

keywords = "3SH, CIGSe, Co-evaporation, Selenization, Spray Pyrolysis",

author = "A. Ashok and Narro-Rios, {J. S.} and O. Nwakanma and G. Regmi and S. Velumani and Pulgarin-Agudelo, {F. A.}",

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year = "2018",

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Ashok, A, Narro-Rios, JS, Nwakanma, O, Regmi, G, Velumani, S & Pulgarin-Agudelo, FA 2018, Characterizations of a Selenized Cu(In _1-x Ga _x )Se ₂ Thin Film Absorber Layer Fabricated by a Three-Stage Hybrid Method En 2018 15th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2018., 8533902, 2018 15th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2018, Institute of Electrical and Electronics Engineers Inc., 15th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2018, Mexico City, México, 5/09/18. https://doi.org/10.1109/ICEEE.2018.8533902

Characterizations of a Selenized Cu(In _1-x Ga _x )Se ₂ Thin Film Absorber Layer Fabricated by a Three-Stage Hybrid Method . / Ashok, A.; Narro-Rios, J. S.; Nwakanma, O. et al.
2018 15th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8533902 (2018 15th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2018).

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

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T1 - Characterizations of a Selenized Cu(In 1-x Ga x )Se 2 Thin Film Absorber Layer Fabricated by a Three-Stage Hybrid Method

AU - Ashok, A.

AU - Narro-Rios, J. S.

AU - Nwakanma, O.

AU - Regmi, G.

AU - Velumani, S.

AU - Pulgarin-Agudelo, F. A.

PY - 2018/11/13

Y1 - 2018/11/13

N2 - The photovoltaic technology has remained one of the favored green technologies to meet the today's energy production demand with the solar cell offering a means of tapping into this source of energy. In this study, the 3-stage hybrid (3SH) method was employed consisting of spray pyrolysis and thermal evaporation to deposit the quaternary copper indium gallium diselenide (CIGSe) thin film solar cell absorber layer. The choice of CIGSe semiconductor for the solar cell application stems from some of the desirable qualities which include direct and variable energy bandgap (1.04-1.65 eV), high absorption coefficient (≈10 5 cm -1 ) and stability. The as-deposited films were selenized to complete the fabrication of the CIGSe absorber layer. The films were characterized for the structural, morphological and electrical properties using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), and Hall measurements.

AB - The photovoltaic technology has remained one of the favored green technologies to meet the today's energy production demand with the solar cell offering a means of tapping into this source of energy. In this study, the 3-stage hybrid (3SH) method was employed consisting of spray pyrolysis and thermal evaporation to deposit the quaternary copper indium gallium diselenide (CIGSe) thin film solar cell absorber layer. The choice of CIGSe semiconductor for the solar cell application stems from some of the desirable qualities which include direct and variable energy bandgap (1.04-1.65 eV), high absorption coefficient (≈10 5 cm -1 ) and stability. The as-deposited films were selenized to complete the fabrication of the CIGSe absorber layer. The films were characterized for the structural, morphological and electrical properties using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), and Hall measurements.

KW - 3SH

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KW - Co-evaporation

KW - Selenization

KW - Spray Pyrolysis

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Ashok A, Narro-Rios JS, Nwakanma O, Regmi G, Velumani S, Pulgarin-Agudelo FA. Characterizations of a Selenized Cu(In _1-x Ga _x )Se ₂ Thin Film Absorber Layer Fabricated by a Three-Stage Hybrid Method En 2018 15th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2018. Institute of Electrical and Electronics Engineers Inc. 2018. 8533902. (2018 15th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2018). doi: 10.1109/ICEEE.2018.8533902

Characterizations of a Selenized Cu(In 1-x Ga x )Se 2 Thin Film Absorber Layer Fabricated by a Three-Stage Hybrid Method