TY - JOUR
T1 - Characterization of the passivation of CdS thin films grown by chemical bath deposition on InP
AU - Vigil Galán, O.
AU - Vidal Larramendi, J.
AU - Riech, I.
AU - Peña Rodríguez, G. G.
AU - Iribarren, A.
AU - Aguilar-Hernández, J.
AU - Contreras-Puente, G.
PY - 2002/11
Y1 - 2002/11
N2 - Thin films of CdS with different nominal ratios c (thiourea)/c (CdCl2) have been grown by conventional chemical bath deposition on an InP substrate, in order to study the influence of each film on the surface passivation of the InP sample. The values of the surface recombination velocity were determined by the photoacoustic technique (PA) and photoluminescence. Atomic force microscopy measurements were also used to correlate the results obtained from the PA measurements.
AB - Thin films of CdS with different nominal ratios c (thiourea)/c (CdCl2) have been grown by conventional chemical bath deposition on an InP substrate, in order to study the influence of each film on the surface passivation of the InP sample. The values of the surface recombination velocity were determined by the photoacoustic technique (PA) and photoluminescence. Atomic force microscopy measurements were also used to correlate the results obtained from the PA measurements.
UR - http://www.scopus.com/inward/record.url?scp=0036851105&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/17/11/311
DO - 10.1088/0268-1242/17/11/311
M3 - Artículo
SN - 0268-1242
VL - 17
SP - 1193
EP - 1197
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 11
ER -