TY - GEN
T1 - Carbon nanotube Schottky diodes performance study
T2 - 2018 Nanotechnology for Instrumentation and Measurement, NANOfIM 2018
AU - Macedo-Zamudio, Hidelberto
AU - Pacheco-Sanchez, Anibal
AU - Ramirez-Garcia, Eloy
AU - Rodriguez-Mendez, Luis M.
AU - Valdez-Perez, Donato
AU - Schroter, Michael
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2019/4/10
Y1 - 2019/4/10
N2 - A systematic study of carbon nanotube (CNT)-based Schottky diodes is performed by means of numerical device simulations and compact modeling. The static performance is discussed for CNT devices with chemical or electrostatic doping achieved by increasing the carrier concentration and by adding additional gates, respectively. The device is designed with an optimized substrate and a horse-shoe shaped coplanar access both suitable for high-frequency applications. Diode performance indicators such as rectifying factor and storage time are obtained and compared to experimental data. Based on the equivalent circuit analysis at forward bias and the Shockley diode equation, intrinsic and extrinsic cutoff frequencies for gate-less devices are obtained. Further device optimization could lead to an improved cutoff frequency as shown by assuming an improved contact transparency and multitube devices. This performance study is intended to aid the technology development of CNT-based diodes for specific applications.
AB - A systematic study of carbon nanotube (CNT)-based Schottky diodes is performed by means of numerical device simulations and compact modeling. The static performance is discussed for CNT devices with chemical or electrostatic doping achieved by increasing the carrier concentration and by adding additional gates, respectively. The device is designed with an optimized substrate and a horse-shoe shaped coplanar access both suitable for high-frequency applications. Diode performance indicators such as rectifying factor and storage time are obtained and compared to experimental data. Based on the equivalent circuit analysis at forward bias and the Shockley diode equation, intrinsic and extrinsic cutoff frequencies for gate-less devices are obtained. Further device optimization could lead to an improved cutoff frequency as shown by assuming an improved contact transparency and multitube devices. This performance study is intended to aid the technology development of CNT-based diodes for specific applications.
KW - CNT
KW - Compact modeling
KW - DC
KW - High-frequency performance
KW - Numerical device simulation
KW - Schottky diode
UR - http://www.scopus.com/inward/record.url?scp=85065034996&partnerID=8YFLogxK
U2 - 10.1109/NANOFIM.2018.8688611
DO - 10.1109/NANOFIM.2018.8688611
M3 - Contribución a la conferencia
AN - SCOPUS:85065034996
T3 - Proceedings - 2018 Nanotechnology for Instrumentation and Measurement, NANOfIM 2018
BT - Proceedings - 2018 Nanotechnology for Instrumentation and Measurement, NANOfIM 2018
A2 - Wang, Zhidong
A2 - Velazquez, Ramiro
A2 - Ponce, Hiram
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 7 November 2018 through 8 November 2018
ER -