Basic readout circuit applied on FGMOS-based CMOS-MEMS inertial sensing prototypes

Benito Granados-Rojas, Mario Alfredo Reyes-Barranca, Luis Martin Flores-Nava, Griselda Stephany Abarca-Jimenez, Yesenia Eleonor Gonzalez-Navarro

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

6 Citas (Scopus)

Resumen

In this work is reported a brief summary of considerations for the design of a basic readout CMOS integrated system applied for the conditioning of small signals taken from a floating-gate based CMOS-MEMS capacitive structure intended for inertial measurement. Both the electromechanical structure and the readout circuit (consisting in a variable capacitor coupled to the gate of a MOSFET and a conventional CMOS amplification stage, respectively) were designed for and fabricated in the 0.5um standard CMOS MPW platform available in ON Semi. Simulation results for every component are presented as well as a comparison with measurements for the second stage of the readout system since the mobile capacitive structure (first stage) needs further post-processing to reach its proper functioning and desired behavior.

Idioma originalInglés
Título de la publicación alojada2017 14th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2017
EditorialInstitute of Electrical and Electronics Engineers Inc.
ISBN (versión digital)9781538634059
DOI
EstadoPublicada - 14 nov. 2017
Evento14th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2017 - Mexico City, México
Duración: 20 sep. 201722 sep. 2017

Serie de la publicación

Nombre2017 14th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2017

Conferencia

Conferencia14th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2017
País/TerritorioMéxico
CiudadMexico City
Período20/09/1722/09/17

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