Band gap measurement of Bi2MoxW1-xO6 by low loss electron energy loss spectroscopy

Damasio Morales-Cruz, Francisco Paraguay-Delgado, Raúl Borja-Urby, Sofía Basurto-Cereceda, Guillermo Herrera-Pérez, Paolo Longo, Marek Malac

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

8 Citas (Scopus)

Resumen

This work shows the comparison of high-resolution electron energy loss spectra (HR-EELS) in the low loss region (0−15 eV) to investigate the electronic structure from koechilinite Bi2MoO6 to rusellite Bi2WO6 varying the stoichiometric relation Bi2MoxW1−xO6. The effect of the Mo to W ratio on the bandgap energy was evaluated on individual particles. Two approximations were considered in order to determine the band gap energy value, the first one was a linear fit and the second one was a mathematical fit. Both analyses are in agreement with those ones collected and analyzed by UV–Vis characterization. Our results suggest a direct electronic transition that increases from about 2.53 eV to about 3 eV as the W content increase from 0% to 100% wt. X-ray diffraction was used to corroborate the crystal structure and crystal size; transmission electron microscopy was used to monitor the morphology evolution and UV–Vis spectroscopy in diffuse reflectance mode to determine the Eg. These techniques complement the characterization of these materials.

Idioma originalInglés
Páginas (desde-hasta)184-189
Número de páginas6
PublicaciónMaterials Science in Semiconductor Processing
Volumen63
DOI
EstadoPublicada - 1 jun. 2017

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