TY - JOUR
T1 - Band gap engineering of indium zinc oxide by nitrogen incorporation
AU - Ortega, J. J.
AU - Aguilar-Frutis, M. A.
AU - Alarcón, G.
AU - Falcony, C.
AU - Méndez-García, V. H.
AU - Araiza, J. J.
N1 - Funding Information:
This work was supported by CONACyT-México ; Projects # CB/2010-105723 and CB/2009-129227. The authors are grateful to Zacarias Rivera and Marcela Guerrero for their technical assistance.
PY - 2014/9
Y1 - 2014/9
N2 - The effects of nitrogen incorporation in indium zinc oxide films, as grown by RF reactive magnetron sputtering, on the structural, electrical and optical properties were studied. It was determined that the variation of the N 2/Ar ratio, in the reactive gas flux, was directly proportional to the nitrogen percentage measured in the sample, and the incorporated nitrogen, which substituted oxygen in the films induces changes in the band gap of the films. This phenomenon was observed by measurement of absorption and transmission spectroscopy in conjunction with spectral ellipsometry. To fit the ellipsometry spectra, the classical and Adachi dispersion models were used. The obtained optical parameters presented notable changes related to the increment of the nitrogen in the film. The band gap narrowed from 3.5 to 2.5 eV as the N2/Ar ratio was increased. The lowest resistivity obtained for these films was 3.8 × 10-4 Ω cm with a carrier concentration of 5.1 × 1020 cm-3.
AB - The effects of nitrogen incorporation in indium zinc oxide films, as grown by RF reactive magnetron sputtering, on the structural, electrical and optical properties were studied. It was determined that the variation of the N 2/Ar ratio, in the reactive gas flux, was directly proportional to the nitrogen percentage measured in the sample, and the incorporated nitrogen, which substituted oxygen in the films induces changes in the band gap of the films. This phenomenon was observed by measurement of absorption and transmission spectroscopy in conjunction with spectral ellipsometry. To fit the ellipsometry spectra, the classical and Adachi dispersion models were used. The obtained optical parameters presented notable changes related to the increment of the nitrogen in the film. The band gap narrowed from 3.5 to 2.5 eV as the N2/Ar ratio was increased. The lowest resistivity obtained for these films was 3.8 × 10-4 Ω cm with a carrier concentration of 5.1 × 1020 cm-3.
KW - Band gap engineering
KW - Band gap narrowing
KW - Indium zinc oxynitride
KW - Nitrogen incorporation
UR - http://www.scopus.com/inward/record.url?scp=84901946147&partnerID=8YFLogxK
U2 - 10.1016/j.mseb.2014.05.005
DO - 10.1016/j.mseb.2014.05.005
M3 - Artículo
AN - SCOPUS:84901946147
SN - 0921-5107
VL - 187
SP - 83
EP - 88
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
ER -