Amorphous silicon carbide TFTs

M. Estrada; A. Cerdeira; L. Resendiz; R. García; B. Iñiguez; L. F. Marsal; J. Pallares

doi:10.1016/j.sse.2006.03.001

Amorphous silicon carbide TFTs

M. Estrada, A. Cerdeira, L. Resendiz, R. García, B. Iñiguez, L. F. Marsal, J. Pallares

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

8 Citas (Scopus)

Resumen

In this paper we present and characterize a-Si_1-xC_x:H thin film transistors, TFTs, fabricated by PECVD deposition. Precise modeling and parameter extraction for these devices was done using a unified procedure previously developed by us for amorphous, polycrystalline, nanocrystalline and organic TFTs. The behavior with temperature and stress of the extracted parameters is analyzed to determine similarities and differences with respect to a-Si:H TFTs. Electrical simulation allowed to estimate the localized traps energy distribution.

Idioma original	Inglés
Páginas (desde-hasta)	460-467
Número de páginas	8
Publicación	Solid-State Electronics
Volumen	50
N.º	3
DOI	https://doi.org/10.1016/j.sse.2006.03.001
Estado	Publicada - mar. 2006
Publicado de forma externa	Sí

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title = "Amorphous silicon carbide TFTs",

abstract = "In this paper we present and characterize a-Si1-xCx:H thin film transistors, TFTs, fabricated by PECVD deposition. Precise modeling and parameter extraction for these devices was done using a unified procedure previously developed by us for amorphous, polycrystalline, nanocrystalline and organic TFTs. The behavior with temperature and stress of the extracted parameters is analyzed to determine similarities and differences with respect to a-Si:H TFTs. Electrical simulation allowed to estimate the localized traps energy distribution.",

keywords = "SiC TFTs, TFT modeling, TFT simulation",

author = "M. Estrada and A. Cerdeira and L. Resendiz and R. Garc{\'i}a and B. I{\~n}iguez and Marsal, {L. F.} and J. Pallares",

note = "Funding Information: We acknowledge Olga Gallegos, Edmundo Rodriguez, Benito Nepomuceno and Enriqueta Aguilar for device fabrication and K.F. Albertin for electrical measurements with temperature. We specially thank M.N.P. Carre{\~n}o and I. Pereyra for many useful discussions. This work was supported by CONACYT project 39708.",

year = "2006",

month = mar,

doi = "10.1016/j.sse.2006.03.001",

language = "Ingl{\'e}s",

volume = "50",

pages = "460--467",

journal = "Solid-State Electronics",

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T1 - Amorphous silicon carbide TFTs

AU - Estrada, M.

AU - Cerdeira, A.

AU - Resendiz, L.

AU - García, R.

AU - Iñiguez, B.

AU - Marsal, L. F.

AU - Pallares, J.

N1 - Funding Information: We acknowledge Olga Gallegos, Edmundo Rodriguez, Benito Nepomuceno and Enriqueta Aguilar for device fabrication and K.F. Albertin for electrical measurements with temperature. We specially thank M.N.P. Carreño and I. Pereyra for many useful discussions. This work was supported by CONACYT project 39708.

PY - 2006/3

Y1 - 2006/3

N2 - In this paper we present and characterize a-Si1-xCx:H thin film transistors, TFTs, fabricated by PECVD deposition. Precise modeling and parameter extraction for these devices was done using a unified procedure previously developed by us for amorphous, polycrystalline, nanocrystalline and organic TFTs. The behavior with temperature and stress of the extracted parameters is analyzed to determine similarities and differences with respect to a-Si:H TFTs. Electrical simulation allowed to estimate the localized traps energy distribution.

AB - In this paper we present and characterize a-Si1-xCx:H thin film transistors, TFTs, fabricated by PECVD deposition. Precise modeling and parameter extraction for these devices was done using a unified procedure previously developed by us for amorphous, polycrystalline, nanocrystalline and organic TFTs. The behavior with temperature and stress of the extracted parameters is analyzed to determine similarities and differences with respect to a-Si:H TFTs. Electrical simulation allowed to estimate the localized traps energy distribution.

KW - SiC TFTs

KW - TFT modeling

KW - TFT simulation

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U2 - 10.1016/j.sse.2006.03.001

DO - 10.1016/j.sse.2006.03.001

M3 - Artículo

SN - 0038-1101

VL - 50

SP - 460

EP - 467

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 3

ER -

Amorphous silicon carbide TFTs

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