TY - JOUR
T1 - Amorphous and excimer laser annealed SiC films for TFT fabrication
AU - García, B.
AU - Estrada, M.
AU - Albertin, K. F.
AU - Carreño, M. N.P.
AU - Pereyra, I.
AU - Resendiz, L.
N1 - Funding Information:
We acknowledge Olga Gallegos, Edmundo Rodriguez, Benito Nepomuceno and Enriqueta Aguilar for device fabrication, as well as Francisco Rodriguez Melgarejo and Rogelio Fragoso for Raman and AFM measurements, respectively. This work was supported by CONACYT Project 39708 and FAPESP 00/10027-3.
PY - 2006/2
Y1 - 2006/2
N2 - The characteristics of hydrogenated amorphous silicon carbide films prepared by PECVD and crystallized by KrF UV excimer laser annealing (ELA), for different annealing conditions, are studied to determine particulate size, surface roughness, band gap and resistivity in order to apply them to TFTs fabrication. Raman spectra for ELA SiC films indicate the presence of 6H-SiC polytype together with Si and C crystallites. We also describe the fabrication process to obtain a-Si1-xCx:H TFTs and ELA TFTs on the same wafer, comparing their output and transfer characteristics.
AB - The characteristics of hydrogenated amorphous silicon carbide films prepared by PECVD and crystallized by KrF UV excimer laser annealing (ELA), for different annealing conditions, are studied to determine particulate size, surface roughness, band gap and resistivity in order to apply them to TFTs fabrication. Raman spectra for ELA SiC films indicate the presence of 6H-SiC polytype together with Si and C crystallites. We also describe the fabrication process to obtain a-Si1-xCx:H TFTs and ELA TFTs on the same wafer, comparing their output and transfer characteristics.
KW - Amorphous and polycrystalline SiC TFTs
KW - ELA
UR - http://www.scopus.com/inward/record.url?scp=32344453336&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2005.11.006
DO - 10.1016/j.sse.2005.11.006
M3 - Artículo
SN - 0038-1101
VL - 50
SP - 241
EP - 247
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 2
ER -