All-optical switching device for infrared based on PbTe quantum dots

E. Rodriguez; G. Kellermann; A. F. Craievich; E. Jimenez; C. L. César; L. C. Barbosa

doi:10.1016/j.spmi.2007.07.017

All-optical switching device for infrared based on PbTe quantum dots

E. Rodriguez, G. Kellermann, A. F. Craievich, E. Jimenez, C. L. César, L. C. Barbosa

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

24 Citas (Scopus)

Resumen

Multilayers of PbTe quantum dots embedded in SiO₂ were fabricated by alternate use of Pulsed Laser Deposition (PLD) and Plasma Enhanced Chemical Vapor Deposition (PECVD) techniques. The morphological properties of the nanostructured material were studied by means of High Resolution Transmission Electron Microscopy (HRTEM), Grazing-Incidence Small-Angle X-ray scattering (GISAXS) and X-ray Reflectometry (XRR) techniques. A preliminary analysis of the GISAXS spectra provided information about the multilayer periodicity and its relationship to the size of the deposited PbTe nanoparticles. Finally multilayers were fabricated inside a Fabry-Perot cavity. The device was characterized by means of Scanning Electron Microscopy (SEM). Transmittance measurements show the device functionality in the infrared region.

Idioma original	Inglés
Páginas (desde-hasta)	626-634
Número de páginas	9
Publicación	Superlattices and Microstructures
Volumen	43
N.º	5-6
DOI	https://doi.org/10.1016/j.spmi.2007.07.017
Estado	Publicada - may. 2008
Publicado de forma externa	Sí

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10.1016/j.spmi.2007.07.017

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@article{697498ae387147389a6271136157c629,

title = "All-optical switching device for infrared based on PbTe quantum dots",

abstract = "Multilayers of PbTe quantum dots embedded in SiO2 were fabricated by alternate use of Pulsed Laser Deposition (PLD) and Plasma Enhanced Chemical Vapor Deposition (PECVD) techniques. The morphological properties of the nanostructured material were studied by means of High Resolution Transmission Electron Microscopy (HRTEM), Grazing-Incidence Small-Angle X-ray scattering (GISAXS) and X-ray Reflectometry (XRR) techniques. A preliminary analysis of the GISAXS spectra provided information about the multilayer periodicity and its relationship to the size of the deposited PbTe nanoparticles. Finally multilayers were fabricated inside a Fabry-Perot cavity. The device was characterized by means of Scanning Electron Microscopy (SEM). Transmittance measurements show the device functionality in the infrared region.",

keywords = "All optical switching devices, GISAXS, PECVD, Pulsed Laser Deposition, Semiconductor quantum dots, X-ray reflectometry",

author = "E. Rodriguez and G. Kellermann and Craievich, {A. F.} and E. Jimenez and C{\'e}sar, {C. L.} and Barbosa, {L. C.}",

note = "Funding Information: The authors thank Brazilian agencies CEPOF, PRONEX and FINEP for financial support. Dr. E. Rodriguez thanks S{\~a}o Paulo State Agency, FAPESP, under contract 04/06950-1 for financial support. The authors also gratefully thank Brazilian Synchrotron Light Laboratory (LNLS) for the GISAXS, HRTEM and SEM measurements.",

year = "2008",

month = may,

doi = "10.1016/j.spmi.2007.07.017",

language = "Ingl{\'e}s",

volume = "43",

pages = "626--634",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

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T1 - All-optical switching device for infrared based on PbTe quantum dots

AU - Rodriguez, E.

AU - Kellermann, G.

AU - Craievich, A. F.

AU - Jimenez, E.

AU - César, C. L.

AU - Barbosa, L. C.

N1 - Funding Information: The authors thank Brazilian agencies CEPOF, PRONEX and FINEP for financial support. Dr. E. Rodriguez thanks São Paulo State Agency, FAPESP, under contract 04/06950-1 for financial support. The authors also gratefully thank Brazilian Synchrotron Light Laboratory (LNLS) for the GISAXS, HRTEM and SEM measurements.

PY - 2008/5

Y1 - 2008/5

N2 - Multilayers of PbTe quantum dots embedded in SiO2 were fabricated by alternate use of Pulsed Laser Deposition (PLD) and Plasma Enhanced Chemical Vapor Deposition (PECVD) techniques. The morphological properties of the nanostructured material were studied by means of High Resolution Transmission Electron Microscopy (HRTEM), Grazing-Incidence Small-Angle X-ray scattering (GISAXS) and X-ray Reflectometry (XRR) techniques. A preliminary analysis of the GISAXS spectra provided information about the multilayer periodicity and its relationship to the size of the deposited PbTe nanoparticles. Finally multilayers were fabricated inside a Fabry-Perot cavity. The device was characterized by means of Scanning Electron Microscopy (SEM). Transmittance measurements show the device functionality in the infrared region.

AB - Multilayers of PbTe quantum dots embedded in SiO2 were fabricated by alternate use of Pulsed Laser Deposition (PLD) and Plasma Enhanced Chemical Vapor Deposition (PECVD) techniques. The morphological properties of the nanostructured material were studied by means of High Resolution Transmission Electron Microscopy (HRTEM), Grazing-Incidence Small-Angle X-ray scattering (GISAXS) and X-ray Reflectometry (XRR) techniques. A preliminary analysis of the GISAXS spectra provided information about the multilayer periodicity and its relationship to the size of the deposited PbTe nanoparticles. Finally multilayers were fabricated inside a Fabry-Perot cavity. The device was characterized by means of Scanning Electron Microscopy (SEM). Transmittance measurements show the device functionality in the infrared region.

KW - All optical switching devices

KW - GISAXS

KW - PECVD

KW - Pulsed Laser Deposition

KW - Semiconductor quantum dots

KW - X-ray reflectometry

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U2 - 10.1016/j.spmi.2007.07.017

DO - 10.1016/j.spmi.2007.07.017

M3 - Artículo

AN - SCOPUS:43049134498

SN - 0749-6036

VL - 43

SP - 626

EP - 634

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 5-6

ER -

All-optical switching device for infrared based on PbTe quantum dots

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