4H-SiC PiN diode electrothermal model for conduction and reverse breakdown for Pspice simulator

Recently, interest in the use of the 4H-SiC material for the manufacture of power devices has increased. The PiN diode is one of the silicon carbide power devices more promising for its application in power converters systems. This has motivated the development of a model that allows describing the 4H-SiC PiN diode behavior correctly. In this paper the simulation results obtained by the implementation of a physical model of the PiN diode in 4H-SiC using Pspice are presented. The model describes the dependency on the temperature for the steady-state condition as well as the breakdown voltage. In order to obtain a suitable description of the main physical phenomena associated to silicon carbide, analytical expressions dependent on temperature, were analyzed and incorporated to the model. The Pspice-implemented model allows describing the behavior of a 4H-SiC PiN diode in forward conduction and reverse breakdown without convergence problems during its simulation.