Ingeniería y ciencia de los materiales
Atomic layer deposition
100%
Arsenic
96%
Bagasse
88%
Epilayers
83%
Photoluminescence
79%
Hydrolysis
79%
Raman scattering
79%
Fermentation
72%
Growth temperature
61%
Characterization (materials science)
57%
Substrates
46%
Temperature
34%
Full width at half maximum
32%
Oxygen
26%
Metallorganic chemical vapor deposition
25%
Silicon
25%
Sugar cane
24%
Secondary ion mass spectrometry
24%
Carrier mobility
24%
Enzymatic hydrolysis
24%
Diffraction
23%
Gallium
23%
Carrier concentration
23%
Crystalline materials
22%
Sugars
19%
Vapors
19%
Hydrogen
17%
Electrons
16%
Impurities
15%
Acids
14%
Aluminum
12%
Xylose
12%
Display devices
12%
Compensation and Redress
12%
Delignification
12%
Carbon
12%
Chemical analysis
10%
Yeast
9%
Enzymes
9%
Glucose
9%
Alcohols
8%
Minerals
8%
Física y astronomía
characterization
81%
arsenic
70%
atomic layer epitaxy
67%
baths
58%
Raman spectra
57%
rare earth elements
56%
photoluminescence
50%
optical properties
42%
nanocrystals
29%
zinc
29%
temperature
26%
oxygen
25%
room temperature
18%
diffraction
17%
magnetic dipoles
17%
dynamic characteristics
16%
passivity
15%
x rays
14%
silicon
14%
interstitials
14%
purity
14%
transmittance
13%
gallium
13%
secondary ion mass spectrometry
13%
carrier mobility
13%
signatures
13%
metalorganic chemical vapor deposition
12%
reactors
12%
vapors
12%
synthesis
11%
chemical composition
11%
atmospheres
11%
transmission electron microscopy
10%
hydrogen
10%
shift
9%
aluminum
8%
carbon
8%
impurities
8%
spectroscopy
8%
ions
7%
electrons
5%
Química
Molecular Layer
84%
Atomic Layer Epitaxy
75%
Fermentation
61%
Photoluminescence
50%
Hydrolysis
40%
Raman Spectrum
35%
Time
23%
Dioxygen
21%
Compound Mobility
16%
Hydrogen
16%
Electron Particle
11%
Surface
10%
Carbon Atom
10%
Xylose
9%
Enzymatic Hydrolysis
8%
Acid Hydrolysis
8%
Leaf Like Crystal
6%
Reaction Yield
6%
Mineral
6%
Glucose
6%
Strain
5%
