Xe+-irradiation effects on multilayer thin-film optical surfaces in EUV lithography

J. P. Allain, A. Hassanein, M. M.C. Allain, B. J. Heuser, M. Nieto, C. Chrobak, D. Rokusek, B. Rice

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

In extreme ultraviolet lithography (EUVL) environments, transient plasma dynamics dictate conditions for particle/surface interactions. A critical challenge facing EUVL development is optical component lifetime in both gas-discharge-produced plasmas (DPP) and laser-produced plasma (LPP) devices. Optical components are exposed to impinging fast ions and neutrals, impurities (H, C, O, N) and debris, leading to component degradation and consequently limiting 13.5-nm light reflection intensity. This paper studies Xe+ irradiation-induced mechanisms that affect the performance of EUVL multilayer collector mirror surfaces. Irradiation conditions include: incident particle energies of 1 keV and 5 keV, Xe+ fluences ranging from about 3 × 1014-5 × 1016 Xe+/cm2 and surface temperatures of 273 K and 473 K. Measurements include in situ quartz crystal microbalance for sputtering rate measurements, ion scattering spectroscopy, X-ray reflectivity and atomic force microscopy. Three distinct erosion regimes for bombardment of MLM with Xe+ are: a low Xe + fluence regime below ∼5 × 1014 Xe +/cm2, a moderate regime at fluences between 5 × 1014 and 5 × 1016 Xe+/cm2 and a high fluence regime >1017 Xe+/cm2.

Original languageEnglish
Pages (from-to)520-522
Number of pages3
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume242
Issue number1-2
DOIs
StatePublished - 1 Jan 2006
Externally publishedYes

Fingerprint

Extreme ultraviolet lithography
Multilayer films
fluence
lithography
Irradiation
Thin films
irradiation
thin films
Plasma devices
Light reflection
Laser produced plasmas
Plasmas
Quartz crystal microbalances
Ions
Beam plasma interactions
X ray spectroscopy
Debris
Discharge (fluid mechanics)
plasma dynamics
Sputtering

Keywords

  • Extreme ultraviolet lithography
  • Multilayer mirrors
  • Sputtering
  • X-ray reflectivity
  • Xenon

Cite this

Allain, J. P. ; Hassanein, A. ; Allain, M. M.C. ; Heuser, B. J. ; Nieto, M. ; Chrobak, C. ; Rokusek, D. ; Rice, B. / Xe+-irradiation effects on multilayer thin-film optical surfaces in EUV lithography. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2006 ; Vol. 242, No. 1-2. pp. 520-522.
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Xe+-irradiation effects on multilayer thin-film optical surfaces in EUV lithography. / Allain, J. P.; Hassanein, A.; Allain, M. M.C.; Heuser, B. J.; Nieto, M.; Chrobak, C.; Rokusek, D.; Rice, B.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 242, No. 1-2, 01.01.2006, p. 520-522.

Research output: Contribution to journalArticle

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AU - Allain, J. P.

AU - Hassanein, A.

AU - Allain, M. M.C.

AU - Heuser, B. J.

AU - Nieto, M.

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