Abstract
This paper reports on a methodology to elaborate interdigitated nanoelectrode devices (INDs) at the wafer scale, relying on a mix-and-match process which combines proximity optical lithography and electron beam lithography. An optimum exposure dose allowed fabricating nanodevices, at the wafer level, with a successful yield of 97%. The final devices are bonded onto conventional TO-8 packages. Electrical characterization in a short-circuited nanoelectrode is performed, revealing a 230νωcm resistivity value at 23°C. A MEMS-based spotter made of cantilevers (called Bioplume) has been used to obtain precise functionalization of the INDs with sub-picoliter volume solutions. These INDs are the basis of multiple tunnel junction nanodevices, intended to serve as novel highly sensitive nanobiosensors.
Original language | English |
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Article number | 105302 |
Journal | Nanotechnology |
Volume | 23 |
Issue number | 10 |
DOIs | |
State | Published - 16 Mar 2012 |