Visible electroluminescence from silicon nanoclusters embedded in chlorinated silicon nitride thin films

J. C. Alonso; F. A. Pulgarín; B. M. Monroy; A. Benami; M. Bizarro; A. Ortiz

doi:10.1016/j.tsf.2009.11.060

Visible electroluminescence from silicon nanoclusters embedded in chlorinated silicon nitride thin films

J. C. Alonso, F. A. Pulgarín, B. M. Monroy, A. Benami, M. Bizarro, A. Ortiz

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Visible electroluminescence (EL) has been obtained from devices with active layers of silicon nanocrystals embedded in chlorinated silicon nitride (Si-nc/SiN_x:Cl) thin films, deposited by remote plasma enhanced chemical vapour deposition, using SiCl₄/NH₃/H₂/Ar. The active nc-Si/SiN_x:Cl film was sandwiched between Al contacts and a transparent conductive contact of ZnO_x:Al deposited by the pyrosol process. White EL centred at around 600 nm was observed, with a turn-on voltage of 5 V, and the intensity increasing as a function of voltage. Recombination between electron-hole pairs generated in the Si-nc by electron impact ionization is proposed as the EL mechanism.

Original language	English
Pages (from-to)	3891-3893
Number of pages	3
Journal	Thin Solid Films
Volume	518
Issue number	14
DOIs	https://doi.org/10.1016/j.tsf.2009.11.060
State	Published - 3 May 2010
Externally published	Yes

Keywords

Luminescence
Nanostructures
Plasma processing and deposition
Silicon
Silicon nitride

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10.1016/j.tsf.2009.11.060

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@article{8211edeaa6854dcd894b6de2e4b9266f,

title = "Visible electroluminescence from silicon nanoclusters embedded in chlorinated silicon nitride thin films",

abstract = "Visible electroluminescence (EL) has been obtained from devices with active layers of silicon nanocrystals embedded in chlorinated silicon nitride (Si-nc/SiNx:Cl) thin films, deposited by remote plasma enhanced chemical vapour deposition, using SiCl4/NH3/H2/Ar. The active nc-Si/SiNx:Cl film was sandwiched between Al contacts and a transparent conductive contact of ZnOx:Al deposited by the pyrosol process. White EL centred at around 600 nm was observed, with a turn-on voltage of 5 V, and the intensity increasing as a function of voltage. Recombination between electron-hole pairs generated in the Si-nc by electron impact ionization is proposed as the EL mechanism.",

keywords = "Luminescence, Nanostructures, Plasma processing and deposition, Silicon, Silicon nitride",

author = "Alonso, {J. C.} and Pulgar{\'i}n, {F. A.} and Monroy, {B. M.} and A. Benami and M. Bizarro and A. Ortiz",

note = "Funding Information: The authors want to acknowledge the technical assistance of R. Ortega from Facultad de Ciencias-UNAM. This work has been partially financed by CONACyT-M{\'e}xico under project 47303-F .",

year = "2010",

month = may,

day = "3",

doi = "10.1016/j.tsf.2009.11.060",

language = "Ingl{\'e}s",

volume = "518",

pages = "3891--3893",

journal = "Thin Solid Films",

issn = "0040-6090",

number = "14",

}

TY - JOUR

T1 - Visible electroluminescence from silicon nanoclusters embedded in chlorinated silicon nitride thin films

AU - Alonso, J. C.

AU - Pulgarín, F. A.

AU - Monroy, B. M.

AU - Benami, A.

AU - Bizarro, M.

AU - Ortiz, A.

N1 - Funding Information: The authors want to acknowledge the technical assistance of R. Ortega from Facultad de Ciencias-UNAM. This work has been partially financed by CONACyT-México under project 47303-F .

PY - 2010/5/3

Y1 - 2010/5/3

N2 - Visible electroluminescence (EL) has been obtained from devices with active layers of silicon nanocrystals embedded in chlorinated silicon nitride (Si-nc/SiNx:Cl) thin films, deposited by remote plasma enhanced chemical vapour deposition, using SiCl4/NH3/H2/Ar. The active nc-Si/SiNx:Cl film was sandwiched between Al contacts and a transparent conductive contact of ZnOx:Al deposited by the pyrosol process. White EL centred at around 600 nm was observed, with a turn-on voltage of 5 V, and the intensity increasing as a function of voltage. Recombination between electron-hole pairs generated in the Si-nc by electron impact ionization is proposed as the EL mechanism.

AB - Visible electroluminescence (EL) has been obtained from devices with active layers of silicon nanocrystals embedded in chlorinated silicon nitride (Si-nc/SiNx:Cl) thin films, deposited by remote plasma enhanced chemical vapour deposition, using SiCl4/NH3/H2/Ar. The active nc-Si/SiNx:Cl film was sandwiched between Al contacts and a transparent conductive contact of ZnOx:Al deposited by the pyrosol process. White EL centred at around 600 nm was observed, with a turn-on voltage of 5 V, and the intensity increasing as a function of voltage. Recombination between electron-hole pairs generated in the Si-nc by electron impact ionization is proposed as the EL mechanism.

KW - Luminescence

KW - Nanostructures

KW - Plasma processing and deposition

KW - Silicon

KW - Silicon nitride

UR - http://www.scopus.com/inward/record.url?scp=77950608233&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2009.11.060

DO - 10.1016/j.tsf.2009.11.060

M3 - Artículo

SN - 0040-6090

VL - 518

SP - 3891

EP - 3893

JO - Thin Solid Films

JF - Thin Solid Films

IS - 14

ER -

Visible electroluminescence from silicon nanoclusters embedded in chlorinated silicon nitride thin films

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Keywords

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