TY - JOUR
T1 - UV photoreflectance spectroscopy in strained silicon on insulator structures
AU - Munguía, Jacobo
AU - Bluet, Jean Marie
AU - Chouaib, Houssam
AU - Bremond, Georges
AU - Bru-Chevallier, Catherine
PY - 2009/5
Y1 - 2009/5
N2 - The optical modulation technique of photoreflectance (PR) is applied on tensely-strained silicon on insulator (sSOI) sub-strates in order to determine the deformation potential in the strained silicon direct band gap. Raman spectroscopy is used for strain determination. A redshift of the Si direct band gap transition is observed as the strain induced in the layer is increased. We report a band gap shrinkage at Γ-point down to 60 ± 6 meV, 120 ± 15 meV and 127 ± 13 meV for 0.77 ± 0.02%, 1.22 ±0.02% and 1.40 ±0.03% of strain, re-spectively. The obtained deformation potential in the direct band gap (a = -0.55 eV and b = -2.45 eV) are in good agree-ment with previously reported results for bulk material.
AB - The optical modulation technique of photoreflectance (PR) is applied on tensely-strained silicon on insulator (sSOI) sub-strates in order to determine the deformation potential in the strained silicon direct band gap. Raman spectroscopy is used for strain determination. A redshift of the Si direct band gap transition is observed as the strain induced in the layer is increased. We report a band gap shrinkage at Γ-point down to 60 ± 6 meV, 120 ± 15 meV and 127 ± 13 meV for 0.77 ± 0.02%, 1.22 ±0.02% and 1.40 ±0.03% of strain, re-spectively. The obtained deformation potential in the direct band gap (a = -0.55 eV and b = -2.45 eV) are in good agree-ment with previously reported results for bulk material.
UR - http://www.scopus.com/inward/record.url?scp=65649138386&partnerID=8YFLogxK
U2 - 10.1002/pssa.200881404
DO - 10.1002/pssa.200881404
M3 - Artículo
SN - 1862-6300
VL - 206
SP - 821
EP - 825
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
IS - 5
ER -