Usxes and optical phenomena in Si low-dimensional structures dependent on morphology and silicon oxide composition on Si surface

T. V. Torchynska; M. Morales Rodriguez; G. P. Polupan; L. I. Khomenkova; N. E. Korsunskaya; V. P. Papusha; L. V. Scherbina; E. P. Domashevskaya; V. A. Terekhov; S. Yu Turischev

doi:10.1142/S0218625X02003329

Usxes and optical phenomena in Si low-dimensional structures dependent on morphology and silicon oxide composition on Si surface

T. V. Torchynska, M. Morales Rodriguez, G. P. Polupan, L. I. Khomenkova, N. E. Korsunskaya, V. P. Papusha, L. V. Scherbina, E. P. Domashevskaya, V. A. Terekhov, S. Yu Turischev

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12 Scopus citations

Abstract

It has been shown that the intensive and broad "red" photoluminescence band in porous silicon is a nonelementary one and could be decomposed on at least three elementary bands. Photoluminescence, ultrasoft x-ray emission spectroscopy, infrared absorption and atomic force microscopy methods were used to study the reasons for both luminescence band appearance in porous silicon photoluminescence spectra, prepared in different technological conditions. The mechanisms of radiative transition for both elementary bands have been discussed as well.

Translated title of the contribution	Usxes y fenómenos ópticos en estructuras de baja dimensión de Si dependientes de la morfología y composición de óxido de silicio en la superficie de Si
Original language	English
Pages (from-to)	1047-1052
Number of pages	6
Journal	Surface Review and Letters
Volume	9
Issue number	2
DOIs	https://doi.org/10.1142/S0218625X02003329
State	Published - Apr 2002

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Torchynska, T. V., Morales Rodriguez, M., Polupan, G. P., Khomenkova, L. I., Korsunskaya, N. E., Papusha, V. P., Scherbina, L. V., Domashevskaya, E. P., Terekhov, V. A., & Turischev, S. Y. (2002). Usxes and optical phenomena in Si low-dimensional structures dependent on morphology and silicon oxide composition on Si surface. Surface Review and Letters, 9(2), 1047-1052. https://doi.org/10.1142/S0218625X02003329

@article{eda360023cda41109048233b87cf1bdc,

title = "Usxes and optical phenomena in Si low-dimensional structures dependent on morphology and silicon oxide composition on Si surface",

abstract = "It has been shown that the intensive and broad {"}red{"} photoluminescence band in porous silicon is a nonelementary one and could be decomposed on at least three elementary bands. Photoluminescence, ultrasoft x-ray emission spectroscopy, infrared absorption and atomic force microscopy methods were used to study the reasons for both luminescence band appearance in porous silicon photoluminescence spectra, prepared in different technological conditions. The mechanisms of radiative transition for both elementary bands have been discussed as well.",

author = "Torchynska, {T. V.} and {Morales Rodriguez}, M. and Polupan, {G. P.} and Khomenkova, {L. I.} and Korsunskaya, {N. E.} and Papusha, {V. P.} and Scherbina, {L. V.} and Domashevskaya, {E. P.} and Terekhov, {V. A.} and Turischev, {S. Yu}",

note = "Funding Information: This work was supported by CONACYT (Project 33427-U) and CGPI | IPN Mexico, as well as the Ministry of Sciences and Education of Ukraine. All AFM results were obtained in UAM-Azcapotsalco, Mexico, in the area of Atomic and Molecular Applied Physics.",

year = "2002",

month = apr,

doi = "10.1142/S0218625X02003329",

language = "Ingl{\'e}s",

volume = "9",

pages = "1047--1052",

journal = "Surface Review and Letters",

issn = "0218-625X",

number = "2",

}

Torchynska, TV, Morales Rodriguez, M, Polupan, GP, Khomenkova, LI, Korsunskaya, NE, Papusha, VP, Scherbina, LV, Domashevskaya, EP, Terekhov, VA & Turischev, SY 2002, 'Usxes and optical phenomena in Si low-dimensional structures dependent on morphology and silicon oxide composition on Si surface', Surface Review and Letters, vol. 9, no. 2, pp. 1047-1052. https://doi.org/10.1142/S0218625X02003329

TY - JOUR

T1 - Usxes and optical phenomena in Si low-dimensional structures dependent on morphology and silicon oxide composition on Si surface

AU - Torchynska, T. V.

AU - Morales Rodriguez, M.

AU - Polupan, G. P.

AU - Khomenkova, L. I.

AU - Korsunskaya, N. E.

AU - Papusha, V. P.

AU - Scherbina, L. V.

AU - Domashevskaya, E. P.

AU - Terekhov, V. A.

AU - Turischev, S. Yu

N1 - Funding Information: This work was supported by CONACYT (Project 33427-U) and CGPI | IPN Mexico, as well as the Ministry of Sciences and Education of Ukraine. All AFM results were obtained in UAM-Azcapotsalco, Mexico, in the area of Atomic and Molecular Applied Physics.

PY - 2002/4

Y1 - 2002/4

N2 - It has been shown that the intensive and broad "red" photoluminescence band in porous silicon is a nonelementary one and could be decomposed on at least three elementary bands. Photoluminescence, ultrasoft x-ray emission spectroscopy, infrared absorption and atomic force microscopy methods were used to study the reasons for both luminescence band appearance in porous silicon photoluminescence spectra, prepared in different technological conditions. The mechanisms of radiative transition for both elementary bands have been discussed as well.

AB - It has been shown that the intensive and broad "red" photoluminescence band in porous silicon is a nonelementary one and could be decomposed on at least three elementary bands. Photoluminescence, ultrasoft x-ray emission spectroscopy, infrared absorption and atomic force microscopy methods were used to study the reasons for both luminescence band appearance in porous silicon photoluminescence spectra, prepared in different technological conditions. The mechanisms of radiative transition for both elementary bands have been discussed as well.

UR - http://www.scopus.com/inward/record.url?scp=0036552936&partnerID=8YFLogxK

U2 - 10.1142/S0218625X02003329

DO - 10.1142/S0218625X02003329

M3 - Artículo

AN - SCOPUS:0036552936

SN - 0218-625X

VL - 9

SP - 1047

EP - 1052

JO - Surface Review and Letters

JF - Surface Review and Letters

IS - 2

ER -

Usxes and optical phenomena in Si low-dimensional structures dependent on morphology and silicon oxide composition on Si surface

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