Trap and recombination centers study in sprayed Cu2ZnSnS4 thin films

Maykel Courel; O. Vigil-Galán; D. Jiménez-Olarte; M. Espíndola-Rodríguez; E. Saucedo

doi:10.1063/1.4897232

Trap and recombination centers study in sprayed Cu₂ZnSnS₄ thin films

Maykel Courel, O. Vigil-Galán, D. Jiménez-Olarte, M. Espíndola-Rodríguez, E. Saucedo

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Abstract

In this work, a study of trap and recombination center properties in polycrystalline Cu₂ZnSnS₄ thin films is carried out in order to understand the poor performance in Cu₂ZnSnS₄ thin film solar cells. Thermally stimulated current has been studied in Cu₂ZnSnS₄ deposited by pneumatic spray pyrolysis method using various heating rates, in order to gain information about trap centers and/or deep levels present within the band-gap of this material. A set of temperature-dependent current curves revealed three levels with activation energy of 126±10, 476±25, and 1100±100meV. The possible nature of the three levels found is presented, in which the first one is likely to be related to Cu_Zn antisites, while second and third to Sn vacancies and Sn_Cu antisites, respectively. The values of frequency factor, capture cross section, and trap concentration have been determined for each center.

Original language	English
Article number	134503
Journal	Journal of Applied Physics
Volume	116
Issue number	13
DOIs	https://doi.org/10.1063/1.4897232
State	Published - 7 Oct 2014

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abstract = "In this work, a study of trap and recombination center properties in polycrystalline Cu2ZnSnS4 thin films is carried out in order to understand the poor performance in Cu2ZnSnS4 thin film solar cells. Thermally stimulated current has been studied in Cu2ZnSnS4 deposited by pneumatic spray pyrolysis method using various heating rates, in order to gain information about trap centers and/or deep levels present within the band-gap of this material. A set of temperature-dependent current curves revealed three levels with activation energy of 126±10, 476±25, and 1100±100meV. The possible nature of the three levels found is presented, in which the first one is likely to be related to CuZn antisites, while second and third to Sn vacancies and SnCu antisites, respectively. The values of frequency factor, capture cross section, and trap concentration have been determined for each center.",

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AU - Courel, Maykel

AU - Vigil-Galán, O.

AU - Jiménez-Olarte, D.

AU - Espíndola-Rodríguez, M.

AU - Saucedo, E.

PY - 2014/10/7

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AB - In this work, a study of trap and recombination center properties in polycrystalline Cu2ZnSnS4 thin films is carried out in order to understand the poor performance in Cu2ZnSnS4 thin film solar cells. Thermally stimulated current has been studied in Cu2ZnSnS4 deposited by pneumatic spray pyrolysis method using various heating rates, in order to gain information about trap centers and/or deep levels present within the band-gap of this material. A set of temperature-dependent current curves revealed three levels with activation energy of 126±10, 476±25, and 1100±100meV. The possible nature of the three levels found is presented, in which the first one is likely to be related to CuZn antisites, while second and third to Sn vacancies and SnCu antisites, respectively. The values of frequency factor, capture cross section, and trap concentration have been determined for each center.

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Trap and recombination centers study in sprayed Cu₂ZnSnS₄ thin films

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