TY - GEN
T1 - Transmission of Dirac electrons through graphene multilayers with Gaussian profile
AU - Aguilar-Hernández, J. A.
AU - Madrigal-Melchor, J.
AU - Martínez-Orozco, J. C.
AU - Rodríguez-Vargas, I.
PY - 2012
Y1 - 2012
N2 - In this work, we use the T-matrix method to study the tunneling of Dirac electrons through graphene multilayers. A graphene sheet is deposited on top of slabs of SiO 2-SiC substrates, of which we applied a Gaussian distribution in the size width of the SiC substrate. We calculate the transmittance as a function of energy for different incident angles and different number of layers of the Gaussian distribution. We obtain different stop-band regions. These regions are wider when the width of the barrier is increased. Furthermore, it is possible to tune the width and the position of stop-band with the angle of incidence, the σ value of the Gaussian distribution, and the difference between the maximum-minimum sizes of the barrier.
AB - In this work, we use the T-matrix method to study the tunneling of Dirac electrons through graphene multilayers. A graphene sheet is deposited on top of slabs of SiO 2-SiC substrates, of which we applied a Gaussian distribution in the size width of the SiC substrate. We calculate the transmittance as a function of energy for different incident angles and different number of layers of the Gaussian distribution. We obtain different stop-band regions. These regions are wider when the width of the barrier is increased. Furthermore, it is possible to tune the width and the position of stop-band with the angle of incidence, the σ value of the Gaussian distribution, and the difference between the maximum-minimum sizes of the barrier.
UR - http://www.scopus.com/inward/record.url?scp=84861119517&partnerID=8YFLogxK
U2 - 10.1557/opl.2012.175
DO - 10.1557/opl.2012.175
M3 - Contribución a la conferencia
AN - SCOPUS:84861119517
SN - 9781605113487
T3 - Materials Research Society Symposium Proceedings
SP - 129
EP - 135
BT - Nanostructured Materials and Nanotechnology
T2 - 20th International Materials Research Congress, IMRC 2011
Y2 - 14 August 2011 through 19 August 2011
ER -