Transit times of SiGe:C HBTs using nonselective base epitaxy

Nicolas Zerounian; Manuel Rodriguez; Mauro Enciso; Frédéric Aniel; Pascal Chevalier; Bertrand Martinet; Alain Chantre

doi:10.1016/j.sse.2004.05.046

Transit times of SiGe:C HBTs using nonselective base epitaxy

Nicolas Zerounian, Manuel Rodriguez, Mauro Enciso, Frédéric Aniel, Pascal Chevalier, Bertrand Martinet, Alain Chantre

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

This paper reports an extensive investigation of high frequency figures of merit versus temperature carried out on SiGe:C bipolar transistors with several base doping and activation annealing conditions. The best f_T's are 188 and 278 GHz at 300 and 75 K, respectively. Contributions to total emitter collector delay are discussed and an original method based on collector capacitance measurement is proposed to calculate the collector transit time.

Original language	English
Pages (from-to)	1993-1999
Number of pages	7
Journal	Solid-State Electronics
Volume	48
Issue number	10-11 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.sse.2004.05.046
State	Published - 2004
Externally published	Yes

Keywords

300-77 K
Charging time
Collector transit time
Cryogenic
Heterojunction bipolar transistors
Integrated bipolar transistors
Parameter extraction
S-parameters
SiGe
Small-signal parameters
Transit time
f
f

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10.1016/j.sse.2004.05.046

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title = "Transit times of SiGe:C HBTs using nonselective base epitaxy",

abstract = "This paper reports an extensive investigation of high frequency figures of merit versus temperature carried out on SiGe:C bipolar transistors with several base doping and activation annealing conditions. The best fT's are 188 and 278 GHz at 300 and 75 K, respectively. Contributions to total emitter collector delay are discussed and an original method based on collector capacitance measurement is proposed to calculate the collector transit time.",

keywords = "300-77 K, Charging time, Collector transit time, Cryogenic, Heterojunction bipolar transistors, Integrated bipolar transistors, Parameter extraction, S-parameters, SiGe, Small-signal parameters, Transit time, f, f",

author = "Nicolas Zerounian and Manuel Rodriguez and Mauro Enciso and Fr{\'e}d{\'e}ric Aniel and Pascal Chevalier and Bertrand Martinet and Alain Chantre",

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doi = "10.1016/j.sse.2004.05.046",

language = "Ingl{\'e}s",

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journal = "Solid-State Electronics",

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T1 - Transit times of SiGe:C HBTs using nonselective base epitaxy

AU - Zerounian, Nicolas

AU - Rodriguez, Manuel

AU - Enciso, Mauro

AU - Aniel, Frédéric

AU - Chevalier, Pascal

AU - Martinet, Bertrand

AU - Chantre, Alain

PY - 2004

Y1 - 2004

N2 - This paper reports an extensive investigation of high frequency figures of merit versus temperature carried out on SiGe:C bipolar transistors with several base doping and activation annealing conditions. The best fT's are 188 and 278 GHz at 300 and 75 K, respectively. Contributions to total emitter collector delay are discussed and an original method based on collector capacitance measurement is proposed to calculate the collector transit time.

AB - This paper reports an extensive investigation of high frequency figures of merit versus temperature carried out on SiGe:C bipolar transistors with several base doping and activation annealing conditions. The best fT's are 188 and 278 GHz at 300 and 75 K, respectively. Contributions to total emitter collector delay are discussed and an original method based on collector capacitance measurement is proposed to calculate the collector transit time.

KW - 300-77 K

KW - Charging time

KW - Collector transit time

KW - Cryogenic

KW - Heterojunction bipolar transistors

KW - Integrated bipolar transistors

KW - Parameter extraction

KW - S-parameters

KW - SiGe

KW - Small-signal parameters

KW - Transit time

KW - f

UR - http://www.scopus.com/inward/record.url?scp=3142708241&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2004.05.046

DO - 10.1016/j.sse.2004.05.046

M3 - Artículo

AN - SCOPUS:3142708241

SN - 0038-1101

VL - 48

SP - 1993

EP - 1999

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 10-11 SPEC. ISS.

ER -

Transit times of SiGe:C HBTs using nonselective base epitaxy

Abstract

Keywords

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