Abstract
A new technique for electro- and cathodoluminescent screen fabrication with the application of a new method of doping ZnS:Cu and ZnO:Cu thin film phosphors is proposed. Thin films of ZnS:Cu were grown by electron-beam evaporation (EBE) from a ZnS:Cu target on substrates heated to 150-200°C, and the Cu concentration in the target was varied from 0.06 to 0.25 wt.%. BaTiO3 and sapphire single crystal substrates were used. The film thickness varied from 0.6 to 9 μm. Parameters of ZnS:Cu films grown by EBE were modified by the use of non-vacuum annealing at 700-1000°C in S2-rich or O2-rich atmosphere both with and without Ga co-doping. The measurement of electroluminescent (EL) and cathodoluminescent (CL) parameters, as well as X-ray diffraction (XRD) techniques and atomic force microscopy (AFM) were used for this research. The EL ZnS:Cu,Ga blue color emission film with a luminance of 30 cd/m2 and green (yellow) color emission film with a luminance of 800 cd/m2 were obtained. Devices with such films have a threshold voltage of 10 V. The CL luminance was 200 cd/m2 for ZnS:Cu,Ga and 1100 cd/m2 for ZnO:Cu,Ga films at 300 K and 3700 cd/m2 for ZnO:Cu,Ga films at 77 K. The films show a deeper green color than commercial phosphors. Clarification that gallium co-doping affects the luminance, since Ga influences on recrystallization process, has been carried out.
Original language | English |
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Pages (from-to) | 76-80 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 403-404 |
DOIs | |
State | Published - 1 Feb 2002 |
Externally published | Yes |
Event | Proceedings of Symposium P on Thin Film Materials for Photovolt E-MRS - Strasbourg, France Duration: 5 Jun 2001 → 8 Jun 2001 |
Keywords
- AFM
- EBE
- Luminescence
- XRD
- ZnO:Cu
- ZnS:Cu