TY - JOUR
T1 - Thermal properties of GaN Films grown on Si substrates
AU - Cervantes-Contreras, M.
AU - Quezada-Maya, C. A.
AU - Mejía-García, C.
AU - López-López, M.
AU - González De La Cruz, G.
AU - Tamura, M.
N1 - Funding Information:
Acknowledgments This work has been partially supported by Consejo Nacional de Ciencia y Tecnolo-gia (Conacyt), Mexico. The authors would like to thank Rogelio Fragoso, Erasmo Gómez, and Marcela Guerrero for technical assistance.
PY - 2009/4
Y1 - 2009/4
N2 - GaN films grown on Si substrates by molecular beam epitaxy with different nitridation times have been investigated. The GaN/Si structural and optical properties were evaluated by transmission electron microscopy, X-ray diffraction, atomic force microscopy, and photoluminescence. The effective thermal conductivity of the GaN/Si system was obtained using the photoacoustic technique, and from these results the nitridation time dependence of the interface thermal conductivity (η) can be evaluated using a two-layer model. An optimal nitridation time for which the GaN crystal quality can be improved was obtained. The variation of the parameter η for different nitridation times can be related to the interface phonon scattering process by the presence of disorder at the GaN/Si interface.
AB - GaN films grown on Si substrates by molecular beam epitaxy with different nitridation times have been investigated. The GaN/Si structural and optical properties were evaluated by transmission electron microscopy, X-ray diffraction, atomic force microscopy, and photoluminescence. The effective thermal conductivity of the GaN/Si system was obtained using the photoacoustic technique, and from these results the nitridation time dependence of the interface thermal conductivity (η) can be evaluated using a two-layer model. An optimal nitridation time for which the GaN crystal quality can be improved was obtained. The variation of the parameter η for different nitridation times can be related to the interface phonon scattering process by the presence of disorder at the GaN/Si interface.
KW - GaN/Si heterostructures
KW - Molecular beam epitaxy
KW - Nitridation time
KW - Photoacoustic technique
KW - Thermal conductivity
UR - http://www.scopus.com/inward/record.url?scp=63949087392&partnerID=8YFLogxK
U2 - 10.1007/s10765-008-0519-5
DO - 10.1007/s10765-008-0519-5
M3 - Artículo
SN - 0195-928X
VL - 30
SP - 591
EP - 598
JO - International Journal of Thermophysics
JF - International Journal of Thermophysics
IS - 2
ER -