TY - JOUR
T1 - The thermo-E.M.F. of an n-type silicon
T2 - assessment of the contribution due to the presence of minority carriers
AU - Kamegni, André Siewe
AU - Lashkevych, Igor
N1 - Publisher Copyright:
© 2023 IOP Publishing Ltd.
PY - 2023/4
Y1 - 2023/4
N2 - In the common thermoelectric theory, minority charge carriers are assumed to be absent in n- or p-type thermoelectric materials. This study considers their presence and evaluates the effects of that presence on the thermo-electromotive force (Thermo-E.M.F.) of a non-degenerate n-type semiconductor. The calculations are done in the case of silicon. The contribution due to the presence of the minority holes to the total Thermo-E.M.F. depends on the thermopower of minority carriers, their electrical and thermal conductivities. It also depends on their bulk and surface recombinations and depends on the majority carriers only through their thermal and electrical conductivities. In the case of silicon, that contribution remains generally very low although it can increase or decrease the total Thermo-E.M.F. depending on the concentration of the doping elements, the bulk and surface recombination rates, and the length of the sample.
AB - In the common thermoelectric theory, minority charge carriers are assumed to be absent in n- or p-type thermoelectric materials. This study considers their presence and evaluates the effects of that presence on the thermo-electromotive force (Thermo-E.M.F.) of a non-degenerate n-type semiconductor. The calculations are done in the case of silicon. The contribution due to the presence of the minority holes to the total Thermo-E.M.F. depends on the thermopower of minority carriers, their electrical and thermal conductivities. It also depends on their bulk and surface recombinations and depends on the majority carriers only through their thermal and electrical conductivities. In the case of silicon, that contribution remains generally very low although it can increase or decrease the total Thermo-E.M.F. depending on the concentration of the doping elements, the bulk and surface recombination rates, and the length of the sample.
KW - minority charge carriers
KW - n-type silicon
KW - quasi-neutrality
KW - recombination
KW - thermo-electromotive force
UR - http://www.scopus.com/inward/record.url?scp=85148904806&partnerID=8YFLogxK
U2 - 10.1088/1361-6641/acb8d1
DO - 10.1088/1361-6641/acb8d1
M3 - Artículo
AN - SCOPUS:85148904806
SN - 0268-1242
VL - 38
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 4
M1 - 045001
ER -