TY - JOUR
T1 - The temperature-dependence of the energy band gap of csvt-grown cdte films determined by photoluminescence
AU - Aguilar-Hernández, J.
AU - Contreras-Puente, G.
AU - Flores-Llamas, H.
AU - Yee-Madeira, H.
AU - Zelaya-Angel, O.
PY - 1995/7/14
Y1 - 1995/7/14
N2 - Semiconducting films of CdTe grown by close-spaced vapour transport (csvt) were studied by photoluminescence. One luminescence band located around 1.588 eV and labelled as/be was observed at a temperature of T = 10 K. Such a band was studied over a wide range of temperatures (10-300 K), and the mechanisms involved in it were identified. Both band-to-band (B-B) and excitonic (be) recombination mechanisms are important at high temperatures (T≥150 K), whereas at low temperatures the be mechanism is the most important.
AB - Semiconducting films of CdTe grown by close-spaced vapour transport (csvt) were studied by photoluminescence. One luminescence band located around 1.588 eV and labelled as/be was observed at a temperature of T = 10 K. Such a band was studied over a wide range of temperatures (10-300 K), and the mechanisms involved in it were identified. Both band-to-band (B-B) and excitonic (be) recombination mechanisms are important at high temperatures (T≥150 K), whereas at low temperatures the be mechanism is the most important.
UR - http://www.scopus.com/inward/record.url?scp=0346624310&partnerID=8YFLogxK
U2 - 10.1088/0022-3727/28/7/033
DO - 10.1088/0022-3727/28/7/033
M3 - Artículo
SN - 0022-3727
VL - 28
SP - 1517
EP - 1520
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
IS - 7
ER -