Abstract
Processes of structural relaxation in GaAs single crystals under microwave electromagnetic radiation depending on duration of processing are investigated. The magnetron radiation with frequency 2,38 GHz and irradiancy 100 W/cm2 is used. It is shown by X-ray diffraction techniques that the change of structural characteristics such as residual stresses, stoichiometry, inclusions, dislocation structure takes place under the microwave processing. The observed kinetics of residual elastic-stresses' relaxation after the cessation of action has nonmonotonic long-term (more than 1000 h) character and depends on the initial state of a material and processing parameters. Thus, the dislocation - point defects' balance is not attained. Some aspects of the complex mechanism of microwave-radiation interaction with the GaAs monocrystal, that leads to the structural-defects' reconstruction, are considered. Obtained results evince a good prospect for using the microwave processing to increase a structural perfection of single crystals.
| Original language | English |
|---|---|
| Pages (from-to) | 21-26 |
| Number of pages | 6 |
| Journal | Metallofizika i Noveishie Tekhnologii |
| Volume | 19 |
| Issue number | 5 |
| State | Published - 1997 |
| Externally published | Yes |
Keywords
- Microwave radiation
- Single crystal
- Structure defects
- X rays