TY - GEN
T1 - The one phonon Raman spectrum of silicon nanostructures
AU - Alfaro, Pedro
AU - Cruz, Miguel
AU - Wang, Chumin
PY - 2006
Y1 - 2006
N2 - Porous silicon is a structurally complex material, in which effects of the pore topology on its physical properties are even controversial. In this work, we use the Born potential and the Green's function, both applied to a supercell model, in order to analyze the Raman response and the phonon band structure of porous silicon. In this model the pores are simulated by empty columns of atoms, in direction [001], produced in a crystalline silicon structure. A consequence of the model is the interconnection between silicon nanocrystals, and then, all the states are extended. However, the results show a behavior similar to the quantum confinement. Moreover, a dependence of the Raman spectra with the pore topology is observed. Finally, a shift of the main Raman peak towards lower frequencies is found, in agreement with experimental data.
AB - Porous silicon is a structurally complex material, in which effects of the pore topology on its physical properties are even controversial. In this work, we use the Born potential and the Green's function, both applied to a supercell model, in order to analyze the Raman response and the phonon band structure of porous silicon. In this model the pores are simulated by empty columns of atoms, in direction [001], produced in a crystalline silicon structure. A consequence of the model is the interconnection between silicon nanocrystals, and then, all the states are extended. However, the results show a behavior similar to the quantum confinement. Moreover, a dependence of the Raman spectra with the pore topology is observed. Finally, a shift of the main Raman peak towards lower frequencies is found, in agreement with experimental data.
UR - http://www.scopus.com/inward/record.url?scp=33750804144&partnerID=8YFLogxK
U2 - 10.1109/NANOEL.2006.1609770
DO - 10.1109/NANOEL.2006.1609770
M3 - Contribución a la conferencia
AN - SCOPUS:33750804144
SN - 0780393589
SN - 9780780393585
T3 - NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings
SP - 454
EP - 457
BT - NanoSingapore 2006
T2 - 2006 IEEE Conference on Emerging Technologies - Nanoelectronics
Y2 - 10 January 2006 through 13 January 2006
ER -