TY - JOUR
T1 - Synthesis of visible light emitting self assembled Ge nanocrystals embedded within a SiO 2 matrix
AU - Hernández-Hernández, A.
AU - Rangel-Kuoppa, V. T.
AU - Plach, Thomas
AU - De Moure-Flores, F.
AU - Quiñones-Galván, J. G.
AU - Santoyo-Salazar, J.
AU - Zapata-Torres, M.
AU - Hernndez-Hernández, L. A.
AU - Meléndez-Lira, M.
N1 - Funding Information:
The technical support of A. Garcia-Sotelo, M. Guerrero, R. Fragoso, L. Lopez, E. Pachinger, B. Wegschaider, A. Halilovic, U. Kainz, E. Nusko, O. Fuchs, and S. Bräuer is gratefully acknowledged. This work was partially supported by CONACyT-Mexico and ICyT-DF. V.T. Rangel-Kuoppa expresses his gratitude to CONACyT, postdoctoral fellowship 78965, and the Fonds zur Förderung der Wissenschaftlichen Forschung (FWF), Vienna, Austria (Project No. 20550). Financial support from the Austrian Federal Ministry of Economy, Family and Youth and the National Foundation for Research, Technology and Development is also gratefully acknowledged. Special gratitude is expressed to Professor Wolfgang Jantsch for his scientific support and advice.
PY - 2012/2/15
Y1 - 2012/2/15
N2 - As-grown light emitting self-assembled Ge nanocrystals (Ge-NCs) embedded in a SiO 2 matrix were produced via a sequential deposition process of SiO 2/Ge/SiO 2 layers employing a reactive radio frequency sputtering technique. Obtained Ge-NCs show a crystallographic phase, the proportion, size, quality, and specific orientation of which are determined by the oxygen partial pressure. Photoluminescence (PL) spectra indicate that the size distribution of Ge-NCs is reduced and centered on about 8 nm when higher oxygen partial pressure is employed; the formation of Ge-NCs is corroborated by transmission electron microscopy measurements, and their sizes are consistent with estimates from PL measurements. Resistivity measurements are explained by a near neighbors hopping process, with specific features depending on the Ge-NCs' size. The features of PL and resistivity measurements indicate that there is no appreciable dependence of the number of interfacial defects on the oxygen partial pressure.
AB - As-grown light emitting self-assembled Ge nanocrystals (Ge-NCs) embedded in a SiO 2 matrix were produced via a sequential deposition process of SiO 2/Ge/SiO 2 layers employing a reactive radio frequency sputtering technique. Obtained Ge-NCs show a crystallographic phase, the proportion, size, quality, and specific orientation of which are determined by the oxygen partial pressure. Photoluminescence (PL) spectra indicate that the size distribution of Ge-NCs is reduced and centered on about 8 nm when higher oxygen partial pressure is employed; the formation of Ge-NCs is corroborated by transmission electron microscopy measurements, and their sizes are consistent with estimates from PL measurements. Resistivity measurements are explained by a near neighbors hopping process, with specific features depending on the Ge-NCs' size. The features of PL and resistivity measurements indicate that there is no appreciable dependence of the number of interfacial defects on the oxygen partial pressure.
UR - http://www.scopus.com/inward/record.url?scp=84857822063&partnerID=8YFLogxK
U2 - 10.1063/1.3688023
DO - 10.1063/1.3688023
M3 - Artículo
SN - 0021-8979
VL - 111
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 4
M1 - 044327
ER -