TY - JOUR
T1 - Surface Morphology and Structure in ZnO films doped with Ga and In impurities
AU - El Filali, Brahim
AU - Torchynska, Tetyana
AU - Polupan, Georgiy
AU - Lozada, Erick Velázquez
AU - Ballardo Rodriguez, Isis Chetzyl
AU - Ramirez Garcia, Jorge Luis
N1 - Publisher Copyright:
© 2022 Published under licence by IOP Publishing Ltd.
PY - 2022
Y1 - 2022
N2 - The ZnO:Ga:In nanocrystal (NC) films co-doped with Ga and In donor type impurities have been investigated The films were produced by spray pyrolysis ultrasonic on Si substrates kept at 400°C. The group of samples was grown with permanent In content of 1at% in the films, and with various Ga contents of 0.5 at% up to 2.5 at% Ga. All samples for better crystallization have been further annealed in a nitrogen flow (5 L/min) at 400°C during 4h. The non-monotonous varying the surface morphology has been detected in ZnO:Ga:In NC films. With a small Ga content (≤1.0 at%) and a high Ga content (≥2.0 at%), the grains have the form of small sheets distributed randomly on the surface. The sheet like shape changes to nanorod with hexagonal cross sections of the size 50-100 nm in films with 1.5 at% Ga. With all Ga concentrations the ZnO films studied demonstrated the crystal structures of wurtzite. However, the XRD peak positions and ZnO lattice parameters change non monotonically versus Ga contents. The factors that favor the non-monotonic change of the parameters of the ZnO crystal lattice have been analysed. The Ga/In doping concentrations necessary to obtain ZnO films with low roughness and flat surface morphology have been estimated.
AB - The ZnO:Ga:In nanocrystal (NC) films co-doped with Ga and In donor type impurities have been investigated The films were produced by spray pyrolysis ultrasonic on Si substrates kept at 400°C. The group of samples was grown with permanent In content of 1at% in the films, and with various Ga contents of 0.5 at% up to 2.5 at% Ga. All samples for better crystallization have been further annealed in a nitrogen flow (5 L/min) at 400°C during 4h. The non-monotonous varying the surface morphology has been detected in ZnO:Ga:In NC films. With a small Ga content (≤1.0 at%) and a high Ga content (≥2.0 at%), the grains have the form of small sheets distributed randomly on the surface. The sheet like shape changes to nanorod with hexagonal cross sections of the size 50-100 nm in films with 1.5 at% Ga. With all Ga concentrations the ZnO films studied demonstrated the crystal structures of wurtzite. However, the XRD peak positions and ZnO lattice parameters change non monotonically versus Ga contents. The factors that favor the non-monotonic change of the parameters of the ZnO crystal lattice have been analysed. The Ga/In doping concentrations necessary to obtain ZnO films with low roughness and flat surface morphology have been estimated.
KW - Ga and In doping
KW - crystal structure
KW - morphology
KW - ultrasonic spray pyrolysis
UR - http://www.scopus.com/inward/record.url?scp=85141819325&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/2307/1/012029
DO - 10.1088/1742-6596/2307/1/012029
M3 - Artículo de la conferencia
AN - SCOPUS:85141819325
SN - 1742-6588
VL - 2307
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
IS - 1
M1 - 012029
T2 - 11th International Congress of Physics Engineering, CIIF 2021
Y2 - 26 September 2021 through 29 September 2021
ER -