Sub-100 nm gate technologies for Si/SiGe-buried-channel RF devices

Engineering & Materials Science

• High electron mobility transistors 100%
• Lithography 62%
• Ohmic contacts 43%
• Dry etching 41%
• Wet etching 40%
• Silicides 39%
• Transconductance 34%
• Polyimides 33%
• Masks 27%
• Fabrication 21%
• Metals 18%

Physics & Astronomy

• field effect transistors 29%
• lithography 20%
• etching 18%
• self alignment 18%
• T shape 17%
• modulation 16%
• fins 14%
• transconductance 13%
• transit 13%
• silicides 12%
• polyimides 12%
• implantation 10%
• electric contacts 10%
• masks 10%
• spacing 9%
• fabrication 7%
• metals 6%