TY - JOUR
T1 - Study of the physical properties of Bi doped CdTe thin films deposited by close space vapour transport
AU - Vigil-Galán, O.
AU - Sánchez-Meza, E.
AU - Sastré-Hernández, J.
AU - Cruz-Gandarilla, F.
AU - Marín, E.
AU - Contreras-Puente, G.
AU - Saucedo, E.
AU - Ruiz, C. M.
AU - Tufiño-Velázquez, M.
AU - Calderón, A.
N1 - Funding Information:
G Contreras-Puente, O. Vigil, F. Cruz-Gandarilla, E Marín, A Calderón and M Tufiño-Velázquez acknowledge support from COFAA-IPN. E. Marín thanks financial support of Projects 20060062 and 20070490 from CGPI-IPN.
PY - 2008/4/30
Y1 - 2008/4/30
N2 - Bi doped cadmium telluride (CdTe:Bi) thin films were grown on glass-substrates by the close space vapour transport method. CdTe:Bi crystals grown by the vertical Bridgman method, varying the nominal Bi concentration in the range between 1 × 1017 and 8 × 1018 cm- 3, were used in powder form for CdTe:Bi thin film deposition. Dark conductivity and photoconductivity measurements in the 90-300 K temperature range and determination by photoacoustic spectroscopy of the optical-absorption coefficient of the films in the 1.0 to 2.4 eV spectral region were carried out. The influence of Bi doping levels upon the intergrain barrier height and other associated grain boundary parameters of the polycrystalline CdTe:Bi thin films were determined from electrical, optical and morphological characterization.
AB - Bi doped cadmium telluride (CdTe:Bi) thin films were grown on glass-substrates by the close space vapour transport method. CdTe:Bi crystals grown by the vertical Bridgman method, varying the nominal Bi concentration in the range between 1 × 1017 and 8 × 1018 cm- 3, were used in powder form for CdTe:Bi thin film deposition. Dark conductivity and photoconductivity measurements in the 90-300 K temperature range and determination by photoacoustic spectroscopy of the optical-absorption coefficient of the films in the 1.0 to 2.4 eV spectral region were carried out. The influence of Bi doping levels upon the intergrain barrier height and other associated grain boundary parameters of the polycrystalline CdTe:Bi thin films were determined from electrical, optical and morphological characterization.
KW - Cadmium telluride
KW - Close space vapour transport
KW - Doping
KW - Photoacoustic spectroscopy
KW - Photoconductivity
UR - http://www.scopus.com/inward/record.url?scp=40749111360&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2007.06.151
DO - 10.1016/j.tsf.2007.06.151
M3 - Artículo
SN - 0040-6090
VL - 516
SP - 3818
EP - 3823
JO - Thin Solid Films
JF - Thin Solid Films
IS - 12
ER -