Study of the Influence of Ga and In Doping on Organic Residuals in Solution-Processed IGZO Thin Films Deposited at Low-Temperature

In this work, the synthesis and characterization of IGZO films was carried out from the individual analysis of ZnO films doped at different In³⁺ and Ga³⁺ wt.%. The thin films were obtained by solution processes at low temperature (200 °C). The films were characterized by X-ray Diffraction, optical transmittance, FTIR spectroscopy and resistivity. It was found that the variation of doping affected the content of organic residuals in the deposited films. In addition, the fabrication and characterization of Metal–Insulator–Semiconductor capacitors on plastic substrates are presented. Interestingly, there was a correlation in the hysteresis with the doping of In³⁺ and Ga³⁺.