TY - JOUR
T1 - Study of structural properties of cubic InN films on GaAs(001) substrates by molecular beam epitaxy and migration enhanced epitaxy
AU - Casallas-Moreno, Y. L.
AU - Pérez-Caro, M.
AU - Gallardo-Hernández, S.
AU - Ramírez-López, M.
AU - Martínez-Velis, I.
AU - Escobosa-Echavarría, A.
AU - López-López, M.
N1 - Funding Information:
This work was partially supported by CONACyT-SENER Project No. 151076 and ICyTDF-México. The authors would like to thank A. Tavira, A. B. Soto, R. Fragoso, M. Guerrero, and A. Guillén for their technical assistance.
PY - 2013/6/7
Y1 - 2013/6/7
N2 - InN epitaxial films with cubic phase were grown by rf-plasma-assisted molecular beam epitaxy (RF-MBE) on GaAs(001) substrates employing two methods: migration-enhanced epitaxy (MEE) and conventional MBE technique. The films were synthesized at different growth temperatures ranging from 490 to 550 °C, and different In beam fluxes (BEPIn) ranging from 5.9 × 10 -7 to 9.7 × 10-7 Torr. We found the optimum conditions for the nucleation of the cubic phase of the InN using a buffer composed of several thin layers, according to reflection high-energy electron diffraction (RHEED) patterns. Crystallographic analysis by high resolution X-ray diffraction (HR-XRD) and RHEED confirmed the growth of c-InN by the two methods. We achieved with the MEE method a higher crystal quality and higher cubic phase purity. The ratio of cubic to hexagonal components in InN films was estimated from the ratio of the integrated X-ray diffraction intensities of the cubic (002) and hexagonal (10 1 ̄ 1) planes measured by X-ray reciprocal space mapping (RSM). For MEE samples, the cubic phase of InN increases employing higher In beam fluxes and higher growth temperatures. We have obtained a cubic purity phase of 96.4% for a film grown at 510 °C by MEE.
AB - InN epitaxial films with cubic phase were grown by rf-plasma-assisted molecular beam epitaxy (RF-MBE) on GaAs(001) substrates employing two methods: migration-enhanced epitaxy (MEE) and conventional MBE technique. The films were synthesized at different growth temperatures ranging from 490 to 550 °C, and different In beam fluxes (BEPIn) ranging from 5.9 × 10 -7 to 9.7 × 10-7 Torr. We found the optimum conditions for the nucleation of the cubic phase of the InN using a buffer composed of several thin layers, according to reflection high-energy electron diffraction (RHEED) patterns. Crystallographic analysis by high resolution X-ray diffraction (HR-XRD) and RHEED confirmed the growth of c-InN by the two methods. We achieved with the MEE method a higher crystal quality and higher cubic phase purity. The ratio of cubic to hexagonal components in InN films was estimated from the ratio of the integrated X-ray diffraction intensities of the cubic (002) and hexagonal (10 1 ̄ 1) planes measured by X-ray reciprocal space mapping (RSM). For MEE samples, the cubic phase of InN increases employing higher In beam fluxes and higher growth temperatures. We have obtained a cubic purity phase of 96.4% for a film grown at 510 °C by MEE.
UR - http://www.scopus.com/inward/record.url?scp=84879396742&partnerID=8YFLogxK
U2 - 10.1063/1.4809644
DO - 10.1063/1.4809644
M3 - Artículo
SN - 0021-8979
VL - 113
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 21
M1 - 214308
ER -