TY - JOUR
T1 - Study of Mn ion charge state in Zn2TiO4 and its impact on the photoluminescence and optical absorption spectra
AU - Borkovska, L.
AU - Stara, T.
AU - Gudymenko, O.
AU - Kozoriz, K.
AU - Vorona, I.
AU - Nosenko, V.
AU - Labbe, C.
AU - Cardin, J.
AU - Kryshtab, T.
N1 - Publisher Copyright:
© 2023, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2023/4
Y1 - 2023/4
N2 - The Zn2TiO4 ceramics doped with manganese of nominal content from 0.0016 to 1.6 mol% were produced by a solid-state reaction and investigated by the X-ray diffraction, photoluminescence (PL), diffuse reflectance spectroscopy and electron paramagnetic resonance (EPR) methods. The influence of sintering conditions (annealing temperature in the range of 800–1200 °C and atmosphere, Mn concentration) on Mn charge state and red PL has been studied. All samples contained a spinel Zn2TiO4 crystal phase with a minor amount of ZnO. The ceramics showed a PL band peaked at 680 nm, which was ascribed to 2Eg → 4A2g transition of Mn4+Ti in the Zn2TiO4. The PL intensity increased with annealing temperature and Mn concentration. The highest PL intensity was found in the samples with 0.1 mol% Mn sintered at 1100 °C. In the EPR spectra, the signals ascribed to residual Cr3+ in the Zn2TiO4, Mn2+ in the ZnO (g = 2.0014, A = 74.1 × 10−4 cm−1, b20 = 235 × 10−4 сm−1) and Mn2+ in the Zn2TiO4 (g = 1.987, A = 74.510 × 10−4 сm−1, b20 = 45 × 10−4 сm−1) were detected. The intensity of EPR signal due to Mn2+ in the Zn2TiO4 increased noticeably in the samples with 1.0 mol% Mn and in those sintered at 1200 °C. This was accompanied by the decrease of Mn4+ PL intensity. It is concluded that manganese dopes the Zn2TiO4 as both Mn4+ and Mn2+, the Mn2+ incorporation is strongly promoted by high annealing temperature (> 1100 °C) and high Mn concentration (~ 1 mol%). It is proposed that optical absorption of Mn-doped Zn2TiO ceramics in the visible spectral range is determined by spin allowed transition of Mn4+Ti and Mn2+/3+ donor-type photoionization transition in the Zn2TiO4.
AB - The Zn2TiO4 ceramics doped with manganese of nominal content from 0.0016 to 1.6 mol% were produced by a solid-state reaction and investigated by the X-ray diffraction, photoluminescence (PL), diffuse reflectance spectroscopy and electron paramagnetic resonance (EPR) methods. The influence of sintering conditions (annealing temperature in the range of 800–1200 °C and atmosphere, Mn concentration) on Mn charge state and red PL has been studied. All samples contained a spinel Zn2TiO4 crystal phase with a minor amount of ZnO. The ceramics showed a PL band peaked at 680 nm, which was ascribed to 2Eg → 4A2g transition of Mn4+Ti in the Zn2TiO4. The PL intensity increased with annealing temperature and Mn concentration. The highest PL intensity was found in the samples with 0.1 mol% Mn sintered at 1100 °C. In the EPR spectra, the signals ascribed to residual Cr3+ in the Zn2TiO4, Mn2+ in the ZnO (g = 2.0014, A = 74.1 × 10−4 cm−1, b20 = 235 × 10−4 сm−1) and Mn2+ in the Zn2TiO4 (g = 1.987, A = 74.510 × 10−4 сm−1, b20 = 45 × 10−4 сm−1) were detected. The intensity of EPR signal due to Mn2+ in the Zn2TiO4 increased noticeably in the samples with 1.0 mol% Mn and in those sintered at 1200 °C. This was accompanied by the decrease of Mn4+ PL intensity. It is concluded that manganese dopes the Zn2TiO4 as both Mn4+ and Mn2+, the Mn2+ incorporation is strongly promoted by high annealing temperature (> 1100 °C) and high Mn concentration (~ 1 mol%). It is proposed that optical absorption of Mn-doped Zn2TiO ceramics in the visible spectral range is determined by spin allowed transition of Mn4+Ti and Mn2+/3+ donor-type photoionization transition in the Zn2TiO4.
UR - http://www.scopus.com/inward/record.url?scp=85153874831&partnerID=8YFLogxK
U2 - 10.1007/s10854-023-10380-3
DO - 10.1007/s10854-023-10380-3
M3 - Artículo
AN - SCOPUS:85153874831
SN - 0957-4522
VL - 34
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 11
M1 - 999
ER -