Structure of PbTe(SiO2)/SiO2 multilayers deposited on Si(111)

Guinther Kellermann, Eugenio Rodriguez, Ernesto Jimenez, Carlos Lenz Cesar, Luiz Carlos Barbosa, Aldo Felix Craievich

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

The structure of thin films composed of a multilayer of PbTe nanocrystals embedded in SiO2, named as PbTe(SiO2), between homogeneous layers of amorphous SiO2 deposited on a single-crystal Si(111) substrate was studied by grazing-incidence small-angle X-ray scattering (GISAXS) as a function of PbTe content. PbTe(SiO2)/SiO2 multilayers were produced by alternately applying plasma-enhanced chemical vapour deposition and pulsed laser deposition techniques. From the analysis of the experimental GISAXS patterns, the average radius and radius dispersion of PbTe nanocrystals were determined. With increasing deposition dose the size of the PbTe nanocrystals progressively increases while their number density decreases. Analysis of the GISAXS intensity profiles along the normal to the sample surface allowed the determination of the period parameter of the layers and a structure parameter that characterizes the disorder in the distances between PbTe layers.

Original languageEnglish
Pages (from-to)385-393
Number of pages9
JournalJournal of Applied Crystallography
Volume43
Issue number3
DOIs
StatePublished - 2010
Externally publishedYes

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