Structural properties of WO3 dependent of the annealing temperature deposited by hot-filament metal oxide deposition

J. E. Flores-Mena; J. Díaz-Reyes; J. A. Balderas-López

Structural properties of WO₃ dependent of the annealing temperature deposited by hot-filament metal oxide deposition

J. E. Flores-Mena, J. Díaz-Reyes, J. A. Balderas-López

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Abstract

In this work presents a study of the effect of the annealing temperature on structural and optical properties of WO3 that has been grown by hot-filament metal oxide deposition (HFMOD). The chemical stoichiometry was determined by X-ray Photoelectron Spectroscopy (XPS). By X-ray diffraction obtained that the as-deposited WO₃ films present mainly monoclinic crystalline phase. WO₃ optical band gap energy can be varied from 2.92 to 3.15 eV obtained by transmittance measurements by annealing WO3 from 100 to 500°C. The Raman spectrum of the as-deposited WO₃ film shows four intense peaks that are typical Raman peaks of crystalline WO₃ (m-phase) that corresponds to the stretching vibrations of the bridging oxygen that are assigned to W-O stretching (υ) and W-O bending (δ) modes, respectively, which enhanced and increased their intensity with the annealing temperature.

Original language	English
Pages (from-to)	504-509
Number of pages	6
Journal	Revista Mexicana de Fisica
Volume	58
Issue number	6
State	Published - 2012

Keywords

Electrochromic semiconductor
Physical properties

Cite this

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AU - Flores-Mena, J. E.

AU - Díaz-Reyes, J.

AU - Balderas-López, J. A.

PY - 2012

Y1 - 2012

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AB - In this work presents a study of the effect of the annealing temperature on structural and optical properties of WO3 that has been grown by hot-filament metal oxide deposition (HFMOD). The chemical stoichiometry was determined by X-ray Photoelectron Spectroscopy (XPS). By X-ray diffraction obtained that the as-deposited WO3 films present mainly monoclinic crystalline phase. WO3 optical band gap energy can be varied from 2.92 to 3.15 eV obtained by transmittance measurements by annealing WO3 from 100 to 500°C. The Raman spectrum of the as-deposited WO3 film shows four intense peaks that are typical Raman peaks of crystalline WO3 (m-phase) that corresponds to the stretching vibrations of the bridging oxygen that are assigned to W-O stretching (υ) and W-O bending (δ) modes, respectively, which enhanced and increased their intensity with the annealing temperature.

KW - Electrochromic semiconductor

KW - Physical properties

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M3 - Artículo

SN - 0035-001X

VL - 58

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EP - 509

JO - Revista Mexicana de Fisica

JF - Revista Mexicana de Fisica

IS - 6

ER -

Structural properties of WO₃ dependent of the annealing temperature deposited by hot-filament metal oxide deposition

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