TY - JOUR
T1 - Structural properties of Sn-doped CdTe thin films grown by pulsed laser deposition using powder as target
AU - Quiñones-Galván, J. G.
AU - Guillén-Cervantes, A.
AU - Campos-González, E.
AU - Santos-Cruz, J.
AU - Mayén-Hernández, S. A.
AU - Olvera, M. De La L.
AU - Zelaya-Angel, O.
AU - Contreras-Puente, G.
AU - De Moure-Flores, F.
N1 - Publisher Copyright:
© 2016 Laser Institute of America.
PY - 2016/8/1
Y1 - 2016/8/1
N2 - Undoped and Sn-doped CdTe thin films were grown by a pulsed laser deposition on glass substrates at 300 °C using a powder as target. CdTe films were grown using CdTe and Sn powders, varying the tin concentration in the range of 1-7 wt. %. The structural properties were analyzed as a function of the Sn amount in the target. The x-ray diffraction shows that the undoped CdTe film has a cubic phase, while Sn-doped CdTe films have a mixture of cubic and hexagonal phases. The compositional analysis showed that the undoped CdTe film has Te excess, while Sn-doped CdTe films have Te deficiencies.
AB - Undoped and Sn-doped CdTe thin films were grown by a pulsed laser deposition on glass substrates at 300 °C using a powder as target. CdTe films were grown using CdTe and Sn powders, varying the tin concentration in the range of 1-7 wt. %. The structural properties were analyzed as a function of the Sn amount in the target. The x-ray diffraction shows that the undoped CdTe film has a cubic phase, while Sn-doped CdTe films have a mixture of cubic and hexagonal phases. The compositional analysis showed that the undoped CdTe film has Te excess, while Sn-doped CdTe films have Te deficiencies.
UR - http://www.scopus.com/inward/record.url?scp=84975302201&partnerID=8YFLogxK
U2 - 10.2351/1.4954202
DO - 10.2351/1.4954202
M3 - Artículo
SN - 1042-346X
VL - 28
JO - Journal of Laser Applications
JF - Journal of Laser Applications
IS - 3
M1 - 032012
ER -