Structural, photoluminescent and electrical properties of CdTe films with different compositions fabricated by CMBD

T. M. Razykov, G. Contreras-Puente, G. C. Chornokur, M. Dybjec, Yu Emirov, B. Ergashev, C. S. Ferekides, A. Hubbimov, B. Ikramov, K. M. Kouchkarov, X. Mathew, D. Morel, S. Ostapenko, E. Sanchez-Meza, E. Stefanakos, H. M. Upadhyaya, O. Vigil-Galan, Yu V. Vorobiev

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35 Scopus citations

Abstract

CdTe films with different compositions (Cd-rich, Te-rich and stoichiometric) were fabricated by a novel and low cost chemical molecular beam deposition method (CMBD) in atmospheric pressure hydrogen flow. Cd and Te granules were used as precursors. The films were deposited on ceramic (SiO2:Al2O3) substrates at 580 °C and 600 °C. The growth rate was varied in the range of 9-30 Å/s. The composition (Cd/Te) of the samples was changed by controlling the molecular beam intensity (MBI) ratio. Three samples fabricated at MBI ratios Cd/Te = 0.5, 1.0 and 1.16 were investigated by XRD, AFM, EDX, SEM, photoluminescence (PL) and Hall methods.

Original languageEnglish
Pages (from-to)90-93
Number of pages4
JournalSolar Energy
Volume83
Issue number1
DOIs
StatePublished - Jan 2009

Keywords

  • CdTe
  • Chemical molecular beam deposition
  • Photoluminescence
  • Resistivity
  • Thin film

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