Structural, optical and electrical study of undoped GaN layers obtained by metalorganic chemical vapor deposition on sapphire substrates

Engineering & Materials Science

• Metallorganic chemical vapor deposition 100%
• Sapphire 84%
• Substrates 44%
• Activation energy 26%
• Temperature 25%
• Photoluminescence 20%
• Organic chemicals 19%
• Buffer layers 18%
• Atomic force microscopy 16%
• Optical properties 15%
• Chemical vapor deposition 14%
• Structural properties 13%
• Electric properties 13%
• X ray diffraction 12%
• Scanning electron microscopy 10%
• Metals 8%

Chemistry

• Chemical Vapour Deposition 57%
• Compound Mobility 48%
• Reaction Activation Energy 43%
• Pressure 36%
• Electrical Property 26%
• Atomic Force Microscopy 25%
• Hexagonal Space Group 24%
• Photoluminescence 24%
• Optical Property 23%
• Conductivity 21%
• Buffer Solution 20%
• Scanning Electron Microscopy 18%
• X-Ray Diffraction 15%

Physics & Astronomy

• metalorganic chemical vapor deposition 60%
• sapphire 53%
• activation energy 23%
• temperature 18%
• buffers 13%
• low pressure 13%
• atomic force microscopy 12%
• reactors 12%
• electrical properties 11%
• photoluminescence 11%
• conductivity 10%
• scanning electron microscopy 10%
• optical properties 10%
• diffraction 8%
• x rays 7%