Structural characterization of the new diamond-like semiconductor CuNbGaSe3

Jesus A. Flores-Cruz; Gerzon E. Delgado; Jines E. Contreras; Miguel Quintero; Luis Nieves; Pedro Grima-Gallardo

Structural characterization of the new diamond-like semiconductor CuNbGaSe₃

Jesus A. Flores-Cruz, Gerzon E. Delgado, Jines E. Contreras, Miguel Quintero, Luis Nieves, Pedro Grima-Gallardo

Research output: Contribution to journal › Article › peer-review

Abstract

The chalcogenide compound CuNbGaSe₃, belonging to the system I-II-III-VI3, has been investigated by means of X-ray powder diffraction and its crystal structure has been refined by the Rietveld method.This is a material of the semiconductor type, which improves the properties of a simple semiconductor like CuGaSe2 because it ads spintronic applications due to its magnetic behavior. The powder pattern was composed by 94.2% of the principal phase CuNbGaSe₃ and 5.8% of the secondary phase Cu0.667NbSe₂. This material crystallizes with a CuFeInSe₃-type structure in the tetragonal space group P4 2c (N° 112), unit cell parameters a = 5.6199(4) Å, c = 11.0275(2) Å, V = 348.28(4) Å3, with a normal adamantane-structure where occurs a degradation of symmetry from the chalcopyrite structure I42d to a related structure P 42c.

Original language	English
Pages (from-to)	228-233
Number of pages	6
Journal	Periodico Tche Quimica
Volume	15
Issue number	29
State	Published - 2018
Externally published	Yes

Keywords

Chalcogenides
Chemical synthesis
Crystal structure
Semiconductors
X-ray diffraction

Cite this

@article{ef6b8cf2b98448e685b8cdf7baa8903d,

title = "Structural characterization of the new diamond-like semiconductor CuNbGaSe3",

abstract = "The chalcogenide compound CuNbGaSe3, belonging to the system I-II-III-VI3, has been investigated by means of X-ray powder diffraction and its crystal structure has been refined by the Rietveld method.This is a material of the semiconductor type, which improves the properties of a simple semiconductor like CuGaSe2 because it ads spintronic applications due to its magnetic behavior. The powder pattern was composed by 94.2% of the principal phase CuNbGaSe3 and 5.8% of the secondary phase Cu0.667NbSe2. This material crystallizes with a CuFeInSe3-type structure in the tetragonal space group P4 2c (N° 112), unit cell parameters a = 5.6199(4) {\AA}, c = 11.0275(2) {\AA}, V = 348.28(4) {\AA}3, with a normal adamantane-structure where occurs a degradation of symmetry from the chalcopyrite structure I42d to a related structure P 42c.",

keywords = "Chalcogenides, Chemical synthesis, Crystal structure, Semiconductors, X-ray diffraction",

author = "Flores-Cruz, {Jesus A.} and Delgado, {Gerzon E.} and Contreras, {Jines E.} and Miguel Quintero and Luis Nieves and Pedro Grima-Gallardo",

note = "Publisher Copyright: {\textcopyright} 2018. Porto Alegre, RS. Brasil.",

year = "2018",

language = "Ingl{\'e}s",

volume = "15",

pages = "228--233",

journal = "Periodico Tche Quimica",

issn = "1806-0374",

publisher = "Tche Quimica Group",

number = "29",

}

TY - JOUR

T1 - Structural characterization of the new diamond-like semiconductor CuNbGaSe3

AU - Flores-Cruz, Jesus A.

AU - Delgado, Gerzon E.

AU - Contreras, Jines E.

AU - Quintero, Miguel

AU - Nieves, Luis

AU - Grima-Gallardo, Pedro

PY - 2018

Y1 - 2018

N2 - The chalcogenide compound CuNbGaSe3, belonging to the system I-II-III-VI3, has been investigated by means of X-ray powder diffraction and its crystal structure has been refined by the Rietveld method.This is a material of the semiconductor type, which improves the properties of a simple semiconductor like CuGaSe2 because it ads spintronic applications due to its magnetic behavior. The powder pattern was composed by 94.2% of the principal phase CuNbGaSe3 and 5.8% of the secondary phase Cu0.667NbSe2. This material crystallizes with a CuFeInSe3-type structure in the tetragonal space group P4 2c (N° 112), unit cell parameters a = 5.6199(4) Å, c = 11.0275(2) Å, V = 348.28(4) Å3, with a normal adamantane-structure where occurs a degradation of symmetry from the chalcopyrite structure I42d to a related structure P 42c.

AB - The chalcogenide compound CuNbGaSe3, belonging to the system I-II-III-VI3, has been investigated by means of X-ray powder diffraction and its crystal structure has been refined by the Rietveld method.This is a material of the semiconductor type, which improves the properties of a simple semiconductor like CuGaSe2 because it ads spintronic applications due to its magnetic behavior. The powder pattern was composed by 94.2% of the principal phase CuNbGaSe3 and 5.8% of the secondary phase Cu0.667NbSe2. This material crystallizes with a CuFeInSe3-type structure in the tetragonal space group P4 2c (N° 112), unit cell parameters a = 5.6199(4) Å, c = 11.0275(2) Å, V = 348.28(4) Å3, with a normal adamantane-structure where occurs a degradation of symmetry from the chalcopyrite structure I42d to a related structure P 42c.

KW - Chalcogenides

KW - Chemical synthesis

KW - Crystal structure

KW - Semiconductors

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=85039428023&partnerID=8YFLogxK

M3 - Artículo

AN - SCOPUS:85039428023

SN - 1806-0374

VL - 15

SP - 228

EP - 233

JO - Periodico Tche Quimica

JF - Periodico Tche Quimica

IS - 29

ER -

Structural characterization of the new diamond-like semiconductor CuNbGaSe₃

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Keywords

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