TY - JOUR
T1 - Structural characterization of Al xGa 1-xSb grown by LPE
AU - Juárez Díaz, G.
AU - Díaz-Reyes, J.
AU - Martínez-Juárez, J.
AU - Galván-Arellano, M.
AU - Balderas-López, J. A.
PY - 2012/10
Y1 - 2012/10
N2 - Al xGa 1-xSb ternary solid solutions lattice-matched to the GaSb (001) substrate with composition in the range 0.05≤x≤0.2 were grown by liquid phase epitaxy. High resolution X-ray diffraction and Raman scattering techniques were applied to characterize Al xGa 1-xSb alloys. The out of plane lattice parameter was estimated directly from the asymmetrical diffractions of planes (115) and (-1-15). The out of plane lattice parameter as a function of Aluminium content is higher than the corresponding bulk lattice parameter of Al xGa 1-xSb layers obtained with Vegards law. These results show that some of the layers are more strained than others. Two peaks are observed in their Raman spectra over this composition range. The assignment of the observed modes to GaSb-like modes is discussed. The studies of the chemical composition of the layers by SIMS exhibit the presence of tellurium, carbon and oxygen like the main residual impurities.
AB - Al xGa 1-xSb ternary solid solutions lattice-matched to the GaSb (001) substrate with composition in the range 0.05≤x≤0.2 were grown by liquid phase epitaxy. High resolution X-ray diffraction and Raman scattering techniques were applied to characterize Al xGa 1-xSb alloys. The out of plane lattice parameter was estimated directly from the asymmetrical diffractions of planes (115) and (-1-15). The out of plane lattice parameter as a function of Aluminium content is higher than the corresponding bulk lattice parameter of Al xGa 1-xSb layers obtained with Vegards law. These results show that some of the layers are more strained than others. Two peaks are observed in their Raman spectra over this composition range. The assignment of the observed modes to GaSb-like modes is discussed. The studies of the chemical composition of the layers by SIMS exhibit the presence of tellurium, carbon and oxygen like the main residual impurities.
KW - High resolution X-ray diffraction (HRXRD)
KW - III-V alloy compound semiconductors
KW - Liquid phase epitaxy (LPE)
KW - Phonons
KW - RAMAN spectroscopy
KW - SIMS
UR - http://www.scopus.com/inward/record.url?scp=84863775073&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2012.03.003
DO - 10.1016/j.mssp.2012.03.003
M3 - Artículo
SN - 1369-8001
VL - 15
SP - 472
EP - 479
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
IS - 5
ER -