Structural and optical characterisation of CdSe1-ySy

J. Díaz-Reyes; J. I. Contreras-Rascón; J. S. Arias-Cerón; J. F. Sánchez-Ramírez; M. Galván-Arellano; J. Martínez-Juárez; J. A. Balderas-López

doi:10.1016/j.mssp.2015.03.001

Structural and optical characterisation of CdSe_1-yS_y

J. Díaz-Reyes, J. I. Contreras-Rascón, J. S. Arias-Cerón, J. F. Sánchez-Ramírez, M. Galván-Arellano, J. Martínez-Juárez, J. A. Balderas-López

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Abstract

In this work presents the structural and optical characterisation of cadmium selenide sulphur (CdSe_1-yS_y) deposited by chemical bath deposition (CBD) technique at a deposited temperature of 20±2 °C varying the sulphur molar fraction from 0% to 42.13%, which is realized by varying the thiourea volume added to the growth solution in the range from 0 to 30 ml. The CdSe_1-yS_y chemical stoichiometry was determined by energy-dispersive X-ray spectroscopy (EDS). X-ray diffraction (XRD) analysis and Raman spectroscopy reveal that CdSe_1-yS_y deposited nanofilms showed hexagonal wurtzite crystalline phase. The average grain size range of the films was from 1.48-9.2 nm that was determined using the Scherrer-Debye equation from W(200) crystalline direction, which was confirmed by high resolution transmission electron microscopy (HRTEM). CdSe_1-yS_y band gap energy can be varied from 1.86 to 2.15 eV by varying the sulphur molar fraction incorporated in the nanofilms. The room temperature photoluminescence presents a dominant band about 3.0 eV that may be associated with the grain size of the nanoparticles.

Original language	English
Pages (from-to)	199-206
Number of pages	8
Journal	Materials Science in Semiconductor Processing
Volume	37
DOIs	https://doi.org/10.1016/j.mssp.2015.03.001
State	Published - 3 Jun 2015

Keywords

CdSeS
HRTEM
Optical band gap
Photoluminescence
Raman spectroscopy
X-ray diffraction

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10.1016/j.mssp.2015.03.001

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@article{492634c996c742328edb2381c426a6ef,

title = "Structural and optical characterisation of CdSe1-ySy",

abstract = "In this work presents the structural and optical characterisation of cadmium selenide sulphur (CdSe1-ySy) deposited by chemical bath deposition (CBD) technique at a deposited temperature of 20±2 °C varying the sulphur molar fraction from 0% to 42.13%, which is realized by varying the thiourea volume added to the growth solution in the range from 0 to 30 ml. The CdSe1-ySy chemical stoichiometry was determined by energy-dispersive X-ray spectroscopy (EDS). X-ray diffraction (XRD) analysis and Raman spectroscopy reveal that CdSe1-ySy deposited nanofilms showed hexagonal wurtzite crystalline phase. The average grain size range of the films was from 1.48-9.2 nm that was determined using the Scherrer-Debye equation from W(200) crystalline direction, which was confirmed by high resolution transmission electron microscopy (HRTEM). CdSe1-ySy band gap energy can be varied from 1.86 to 2.15 eV by varying the sulphur molar fraction incorporated in the nanofilms. The room temperature photoluminescence presents a dominant band about 3.0 eV that may be associated with the grain size of the nanoparticles.",

keywords = "CdSeS, HRTEM, Optical band gap, Photoluminescence, Raman spectroscopy, X-ray diffraction",

author = "J. D{\'i}az-Reyes and Contreras-Rasc{\'o}n, {J. I.} and Arias-Cer{\'o}n, {J. S.} and S{\'a}nchez-Ram{\'i}rez, {J. F.} and M. Galv{\'a}n-Arellano and J. Mart{\'i}nez-Ju{\'a}rez and Balderas-L{\'o}pez, {J. A.}",

year = "2015",

month = jun,

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doi = "10.1016/j.mssp.2015.03.001",

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pages = "199--206",

journal = "Materials Science in Semiconductor Processing",

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TY - JOUR

T1 - Structural and optical characterisation of CdSe1-ySy

AU - Díaz-Reyes, J.

AU - Contreras-Rascón, J. I.

AU - Arias-Cerón, J. S.

AU - Sánchez-Ramírez, J. F.

AU - Galván-Arellano, M.

AU - Martínez-Juárez, J.

AU - Balderas-López, J. A.

PY - 2015/6/3

Y1 - 2015/6/3

N2 - In this work presents the structural and optical characterisation of cadmium selenide sulphur (CdSe1-ySy) deposited by chemical bath deposition (CBD) technique at a deposited temperature of 20±2 °C varying the sulphur molar fraction from 0% to 42.13%, which is realized by varying the thiourea volume added to the growth solution in the range from 0 to 30 ml. The CdSe1-ySy chemical stoichiometry was determined by energy-dispersive X-ray spectroscopy (EDS). X-ray diffraction (XRD) analysis and Raman spectroscopy reveal that CdSe1-ySy deposited nanofilms showed hexagonal wurtzite crystalline phase. The average grain size range of the films was from 1.48-9.2 nm that was determined using the Scherrer-Debye equation from W(200) crystalline direction, which was confirmed by high resolution transmission electron microscopy (HRTEM). CdSe1-ySy band gap energy can be varied from 1.86 to 2.15 eV by varying the sulphur molar fraction incorporated in the nanofilms. The room temperature photoluminescence presents a dominant band about 3.0 eV that may be associated with the grain size of the nanoparticles.

AB - In this work presents the structural and optical characterisation of cadmium selenide sulphur (CdSe1-ySy) deposited by chemical bath deposition (CBD) technique at a deposited temperature of 20±2 °C varying the sulphur molar fraction from 0% to 42.13%, which is realized by varying the thiourea volume added to the growth solution in the range from 0 to 30 ml. The CdSe1-ySy chemical stoichiometry was determined by energy-dispersive X-ray spectroscopy (EDS). X-ray diffraction (XRD) analysis and Raman spectroscopy reveal that CdSe1-ySy deposited nanofilms showed hexagonal wurtzite crystalline phase. The average grain size range of the films was from 1.48-9.2 nm that was determined using the Scherrer-Debye equation from W(200) crystalline direction, which was confirmed by high resolution transmission electron microscopy (HRTEM). CdSe1-ySy band gap energy can be varied from 1.86 to 2.15 eV by varying the sulphur molar fraction incorporated in the nanofilms. The room temperature photoluminescence presents a dominant band about 3.0 eV that may be associated with the grain size of the nanoparticles.

KW - CdSeS

KW - HRTEM

KW - Optical band gap

KW - Photoluminescence

KW - Raman spectroscopy

KW - X-ray diffraction

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U2 - 10.1016/j.mssp.2015.03.001

DO - 10.1016/j.mssp.2015.03.001

M3 - Artículo

SN - 1369-8001

VL - 37

SP - 199

EP - 206

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

ER -

Structural and optical characterisation of CdSe_1-yS_y

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Keywords

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