Structural and luminescent characteristics of macro porous silicon

B. Bulakh; N. Korsunska; L. Khomenkova; T. Stara; Ye Venger; T. Kryshtab; A. Kryvko

doi:10.1007/S10854-007-9550-8

Structural and luminescent characteristics of macro porous silicon

B. Bulakh, N. Korsunska, L. Khomenkova, T. Stara, Ye Venger, T. Kryshtab, A. Kryvko

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The results of structural and luminescent study of porous Si prepared by electrochemical etching and containing the pores of micron sizes are presented. The samples demonstrate bright luminescence with external quantum efficiency of 15-20%. Raman scattering spectra contain only one line corresponding to bulk silicon. Atomic force microscopy image shows the structural elements essentially larger than quantum confinement crystallites. However, X-ray diffraction measurements demonstrate the presence of strained Si quantum confinement nanowires. It is shown that the recombination through interface oxiderelated centers of the carriers excited due to light absorption in quantum confinement nanowires gives an essential contribution to emission spectra.

Translated title of the contribution	Características estructurales y luminiscentes del silicio macroporoso
Original language	English
Pages (from-to)	S226-S229
Journal	Journal of Materials Science: Materials in Electronics
Volume	20
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1007/S10854-007-9550-8
State	Published - Jan 2009

Keywords

Afm
Pl
Porous
Si
Xrd

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10.1007/S10854-007-9550-8

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@article{491d5cb6296c41e8b18af620b209a305,

title = "Structural and luminescent characteristics of macro porous silicon",

abstract = "The results of structural and luminescent study of porous Si prepared by electrochemical etching and containing the pores of micron sizes are presented. The samples demonstrate bright luminescence with external quantum efficiency of 15-20%. Raman scattering spectra contain only one line corresponding to bulk silicon. Atomic force microscopy image shows the structural elements essentially larger than quantum confinement crystallites. However, X-ray diffraction measurements demonstrate the presence of strained Si quantum confinement nanowires. It is shown that the recombination through interface oxiderelated centers of the carriers excited due to light absorption in quantum confinement nanowires gives an essential contribution to emission spectra.",

keywords = "Afm, Pl, Porous, Si, Xrd",

author = "B. Bulakh and N. Korsunska and L. Khomenkova and T. Stara and Ye Venger and T. Kryshtab and A. Kryvko",

year = "2009",

month = jan,

doi = "10.1007/S10854-007-9550-8",

language = "Ingl{\'e}s",

volume = "20",

pages = "S226--S229",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

number = "SUPPL. 1",

}

TY - JOUR

T1 - Structural and luminescent characteristics of macro porous silicon

AU - Bulakh, B.

AU - Korsunska, N.

AU - Khomenkova, L.

AU - Stara, T.

AU - Venger, Ye

AU - Kryshtab, T.

AU - Kryvko, A.

PY - 2009/1

Y1 - 2009/1

N2 - The results of structural and luminescent study of porous Si prepared by electrochemical etching and containing the pores of micron sizes are presented. The samples demonstrate bright luminescence with external quantum efficiency of 15-20%. Raman scattering spectra contain only one line corresponding to bulk silicon. Atomic force microscopy image shows the structural elements essentially larger than quantum confinement crystallites. However, X-ray diffraction measurements demonstrate the presence of strained Si quantum confinement nanowires. It is shown that the recombination through interface oxiderelated centers of the carriers excited due to light absorption in quantum confinement nanowires gives an essential contribution to emission spectra.

AB - The results of structural and luminescent study of porous Si prepared by electrochemical etching and containing the pores of micron sizes are presented. The samples demonstrate bright luminescence with external quantum efficiency of 15-20%. Raman scattering spectra contain only one line corresponding to bulk silicon. Atomic force microscopy image shows the structural elements essentially larger than quantum confinement crystallites. However, X-ray diffraction measurements demonstrate the presence of strained Si quantum confinement nanowires. It is shown that the recombination through interface oxiderelated centers of the carriers excited due to light absorption in quantum confinement nanowires gives an essential contribution to emission spectra.

KW - Afm

KW - Pl

KW - Porous

KW - Si

KW - Xrd

UR - http://www.scopus.com/inward/record.url?scp=71049186041&partnerID=8YFLogxK

U2 - 10.1007/S10854-007-9550-8

DO - 10.1007/S10854-007-9550-8

M3 - Artículo

AN - SCOPUS:71049186041

SN - 0957-4522

VL - 20

SP - S226-S229

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - SUPPL. 1

ER -

Structural and luminescent characteristics of macro porous silicon

Abstract

Keywords

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