Structural and luminescent characteristics of macro porous silicon

B. Bulakh, N. Korsunska, L. Khomenkova, T. Stara, Ye Venger, T. Kryshtab, A. Kryvko

Research output: Contribution to conferencePaperResearch

4 Citations (Scopus)

Abstract

The results of structural and luminescent study of porous Si prepared by electrochemical etching and containing the pores of micron sizes are presented. The samples demonstrate bright luminescence with external quantum efficiency of 15-20%. Raman scattering spectra contain only one line corresponding to bulk silicon. Atomic force microscopy image shows the structural elements essentially larger than quantum confinement crystallites. However, X-ray diffraction measurements demonstrate the presence of strained Si quantum confinement nanowires. It is shown that the recombination through interface oxiderelated centers of the carriers excited due to light absorption in quantum confinement nanowires gives an essential contribution to emission spectra.
Original languageAmerican English
DOIs
StatePublished - 1 Jan 2009
EventJournal of Materials Science: Materials in Electronics -
Duration: 1 Jan 2009 → …

Conference

ConferenceJournal of Materials Science: Materials in Electronics
Period1/01/09 → …

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Quantum confinement
Porous silicon
porous silicon
Macros
Nanowires
nanowires
Electrochemical etching
Silicon
electromagnetic absorption
Quantum efficiency
Crystallites
Light absorption
crystallites
Raman scattering
Luminescence
quantum efficiency
Atomic force microscopy
emission spectra
etching
atomic force microscopy

Cite this

Bulakh, B., Korsunska, N., Khomenkova, L., Stara, T., Venger, Y., Kryshtab, T., & Kryvko, A. (2009). Structural and luminescent characteristics of macro porous silicon. Paper presented at Journal of Materials Science: Materials in Electronics, . https://doi.org/10.1007/S10854-007-9550-8
Bulakh, B. ; Korsunska, N. ; Khomenkova, L. ; Stara, T. ; Venger, Ye ; Kryshtab, T. ; Kryvko, A. / Structural and luminescent characteristics of macro porous silicon. Paper presented at Journal of Materials Science: Materials in Electronics, .
@conference{491d5cb6296c41e8b18af620b209a305,
title = "Structural and luminescent characteristics of macro porous silicon",
abstract = "The results of structural and luminescent study of porous Si prepared by electrochemical etching and containing the pores of micron sizes are presented. The samples demonstrate bright luminescence with external quantum efficiency of 15-20{\%}. Raman scattering spectra contain only one line corresponding to bulk silicon. Atomic force microscopy image shows the structural elements essentially larger than quantum confinement crystallites. However, X-ray diffraction measurements demonstrate the presence of strained Si quantum confinement nanowires. It is shown that the recombination through interface oxiderelated centers of the carriers excited due to light absorption in quantum confinement nanowires gives an essential contribution to emission spectra.",
author = "B. Bulakh and N. Korsunska and L. Khomenkova and T. Stara and Ye Venger and T. Kryshtab and A. Kryvko",
year = "2009",
month = "1",
day = "1",
doi = "10.1007/S10854-007-9550-8",
language = "American English",
note = "Journal of Materials Science: Materials in Electronics ; Conference date: 01-01-2009",

}

Bulakh, B, Korsunska, N, Khomenkova, L, Stara, T, Venger, Y, Kryshtab, T & Kryvko, A 2009, 'Structural and luminescent characteristics of macro porous silicon' Paper presented at Journal of Materials Science: Materials in Electronics, 1/01/09, . https://doi.org/10.1007/S10854-007-9550-8

Structural and luminescent characteristics of macro porous silicon. / Bulakh, B.; Korsunska, N.; Khomenkova, L.; Stara, T.; Venger, Ye; Kryshtab, T.; Kryvko, A.

2009. Paper presented at Journal of Materials Science: Materials in Electronics, .

Research output: Contribution to conferencePaperResearch

TY - CONF

T1 - Structural and luminescent characteristics of macro porous silicon

AU - Bulakh, B.

AU - Korsunska, N.

AU - Khomenkova, L.

AU - Stara, T.

AU - Venger, Ye

AU - Kryshtab, T.

AU - Kryvko, A.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - The results of structural and luminescent study of porous Si prepared by electrochemical etching and containing the pores of micron sizes are presented. The samples demonstrate bright luminescence with external quantum efficiency of 15-20%. Raman scattering spectra contain only one line corresponding to bulk silicon. Atomic force microscopy image shows the structural elements essentially larger than quantum confinement crystallites. However, X-ray diffraction measurements demonstrate the presence of strained Si quantum confinement nanowires. It is shown that the recombination through interface oxiderelated centers of the carriers excited due to light absorption in quantum confinement nanowires gives an essential contribution to emission spectra.

AB - The results of structural and luminescent study of porous Si prepared by electrochemical etching and containing the pores of micron sizes are presented. The samples demonstrate bright luminescence with external quantum efficiency of 15-20%. Raman scattering spectra contain only one line corresponding to bulk silicon. Atomic force microscopy image shows the structural elements essentially larger than quantum confinement crystallites. However, X-ray diffraction measurements demonstrate the presence of strained Si quantum confinement nanowires. It is shown that the recombination through interface oxiderelated centers of the carriers excited due to light absorption in quantum confinement nanowires gives an essential contribution to emission spectra.

U2 - 10.1007/S10854-007-9550-8

DO - 10.1007/S10854-007-9550-8

M3 - Paper

ER -

Bulakh B, Korsunska N, Khomenkova L, Stara T, Venger Y, Kryshtab T et al. Structural and luminescent characteristics of macro porous silicon. 2009. Paper presented at Journal of Materials Science: Materials in Electronics, . https://doi.org/10.1007/S10854-007-9550-8