Strain dependence of indirect band gap for strained silicon on insulator wafers

J. Munguía; G. Bremond; J. M. Bluet; J. M. Hartmann; M. Mermoux

doi:10.1063/1.2978241

Strain dependence of indirect band gap for strained silicon on insulator wafers

J. Munguía, G. Bremond, J. M. Bluet, J. M. Hartmann, M. Mermoux

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

We have used low temperature photoluminescence measurements in order to quantify the impact of strain effect on the Si indirect band gap in 9 nm thick tensely strained silicon on insulator layers. A redshift of the transverse optical phonon excitonic recombination in the strained silicon layer was evidenced as the strain in the layer is increased. Band gap shrinkages in the Δ direction equal to 130±3 meV, 184±3 meV, and 239±3 meV were obtained for 0.87±0.03%, 1.22±0.05%, and 1.54±0.06% strain values. These measured indirect transitions are in good agreement with the calculated strained silicon indirect band gap values.

Original language	English
Article number	102101
Journal	Applied Physics Letters
Volume	93
Issue number	10
DOIs	https://doi.org/10.1063/1.2978241
State	Published - 2008
Externally published	Yes

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title = "Strain dependence of indirect band gap for strained silicon on insulator wafers",

abstract = "We have used low temperature photoluminescence measurements in order to quantify the impact of strain effect on the Si indirect band gap in 9 nm thick tensely strained silicon on insulator layers. A redshift of the transverse optical phonon excitonic recombination in the strained silicon layer was evidenced as the strain in the layer is increased. Band gap shrinkages in the Δ direction equal to 130±3 meV, 184±3 meV, and 239±3 meV were obtained for 0.87±0.03%, 1.22±0.05%, and 1.54±0.06% strain values. These measured indirect transitions are in good agreement with the calculated strained silicon indirect band gap values.",

author = "J. Mungu{\'i}a and G. Bremond and Bluet, {J. M.} and Hartmann, {J. M.} and M. Mermoux",

note = "Funding Information: This work was partially supported by the CONACYT grant program and the MEDEA 2T 101 in the frame of the CEA-LETI/INL collaboration. The authors thank SOITEC for the sample preparation.",

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doi = "10.1063/1.2978241",

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volume = "93",

journal = "Applied Physics Letters",

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T1 - Strain dependence of indirect band gap for strained silicon on insulator wafers

AU - Munguía, J.

AU - Bremond, G.

AU - Bluet, J. M.

AU - Hartmann, J. M.

AU - Mermoux, M.

N1 - Funding Information: This work was partially supported by the CONACYT grant program and the MEDEA 2T 101 in the frame of the CEA-LETI/INL collaboration. The authors thank SOITEC for the sample preparation.

PY - 2008

Y1 - 2008

N2 - We have used low temperature photoluminescence measurements in order to quantify the impact of strain effect on the Si indirect band gap in 9 nm thick tensely strained silicon on insulator layers. A redshift of the transverse optical phonon excitonic recombination in the strained silicon layer was evidenced as the strain in the layer is increased. Band gap shrinkages in the Δ direction equal to 130±3 meV, 184±3 meV, and 239±3 meV were obtained for 0.87±0.03%, 1.22±0.05%, and 1.54±0.06% strain values. These measured indirect transitions are in good agreement with the calculated strained silicon indirect band gap values.

AB - We have used low temperature photoluminescence measurements in order to quantify the impact of strain effect on the Si indirect band gap in 9 nm thick tensely strained silicon on insulator layers. A redshift of the transverse optical phonon excitonic recombination in the strained silicon layer was evidenced as the strain in the layer is increased. Band gap shrinkages in the Δ direction equal to 130±3 meV, 184±3 meV, and 239±3 meV were obtained for 0.87±0.03%, 1.22±0.05%, and 1.54±0.06% strain values. These measured indirect transitions are in good agreement with the calculated strained silicon indirect band gap values.

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U2 - 10.1063/1.2978241

DO - 10.1063/1.2978241

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SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

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ER -

Strain dependence of indirect band gap for strained silicon on insulator wafers

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