TY - JOUR
T1 - Static and Small-Signal Modeling of Radiofrequency Hexagonal Boron Nitride Switches
AU - Pacheco-Sanchez, Anibal
AU - Jordán-Garcia, Omar
AU - Ramírez-García, Eloy
AU - Jiménez, David
N1 - Publisher Copyright:
© 2013 IEEE.
PY - 2023
Y1 - 2023
N2 - A first modeling approximation of the general performance of radiofrequency (RF) switches based on hexagonal boron nitride (hBN), a two-dimensional (2D) dielectric material is presented. The I-V characteristics intrinsic and extrinsic impedance parameters, the return loss, insertion loss and isolation of RF 2D switches fabricated with hBN are described here by a equivalent circuit models. Straightforward analytical expressions are obtained. In contrast to conventional switches, the unique RF performance of the hBN switch, at ON-state, i.e., a direct improvement with frequency of the insertion loss, is accurately described by considering a capacitor in the intrinsic part of the model. The latter is suggested to be related to storaged charge during the resistive switching mechanism. The highest mean relative error obtained between modeling and measurements of the return loss is of 7.6% with the approach presented here which overcomes the 42.5% of difference obtained with a previous model with an incomplete intrinsic device description.
AB - A first modeling approximation of the general performance of radiofrequency (RF) switches based on hexagonal boron nitride (hBN), a two-dimensional (2D) dielectric material is presented. The I-V characteristics intrinsic and extrinsic impedance parameters, the return loss, insertion loss and isolation of RF 2D switches fabricated with hBN are described here by a equivalent circuit models. Straightforward analytical expressions are obtained. In contrast to conventional switches, the unique RF performance of the hBN switch, at ON-state, i.e., a direct improvement with frequency of the insertion loss, is accurately described by considering a capacitor in the intrinsic part of the model. The latter is suggested to be related to storaged charge during the resistive switching mechanism. The highest mean relative error obtained between modeling and measurements of the return loss is of 7.6% with the approach presented here which overcomes the 42.5% of difference obtained with a previous model with an incomplete intrinsic device description.
KW - 2D
KW - RF switch
KW - hBN
KW - insertion loss
KW - isolation
KW - resistive switching
UR - http://www.scopus.com/inward/record.url?scp=85153520678&partnerID=8YFLogxK
U2 - 10.1109/JEDS.2023.3268349
DO - 10.1109/JEDS.2023.3268349
M3 - Artículo
AN - SCOPUS:85153520678
SN - 2168-6734
VL - 11
SP - 658
EP - 664
JO - IEEE Journal of the Electron Devices Society
JF - IEEE Journal of the Electron Devices Society
ER -