Sonosynthesis of microstructures array for semiconductor photovoltaics

R. K. Savkina; A. B. Smirnov; T. Kryshtab; A. Kryvko

doi:10.1016/j.mssp.2015.02.066

Sonosynthesis of microstructures array for semiconductor photovoltaics

R. K. Savkina, A. B. Smirnov, T. Kryshtab, A. Kryvko

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The properties of the silicon samples subjected to cavitation impacts have been studied. It was shown that high-intensity (15 W/cm²) and high-frequency (1-6 MHz) sonication of silicon samples in the liquid nitrogen induces changes of the physical, chemical, and structural properties of semiconductor surface. Optical, atomic force and scanning electron microscopy techniques as well as energy dispersive X-ray spectroscopy, X-ray diffraction and photoresponse spectroscopy were used. The experimental study demonstrates the microstructure formation as well as a change of the chemical composition at the silicon surface. It was found that a significant rise in value and expansion of the spectral range of photosensitivity take place after cavitation treatment. The photoresponse of about 2.0 eV can be connected with the formation of Si-rich SiN_x compound inside the ultrasonically structured region of Si. The obtained value of the refractive index confirms this assumption.

Translated title of the contribution	Sonosíntesis de matriz de microestructuras para fotovoltaica de semiconductores
Original language	English
Pages (from-to)	179-184
Number of pages	6
Journal	Materials Science in Semiconductor Processing
Volume	37
DOIs	https://doi.org/10.1016/j.mssp.2015.02.066
State	Published - 3 Jun 2015

Keywords

Dendritic structure
Silicon
Strain engineering
Ultrasonic cavitation

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@article{c225b403fee148c68f3fa7caa9dd774d,

title = "Sonosynthesis of microstructures array for semiconductor photovoltaics",

abstract = "The properties of the silicon samples subjected to cavitation impacts have been studied. It was shown that high-intensity (15 W/cm2) and high-frequency (1-6 MHz) sonication of silicon samples in the liquid nitrogen induces changes of the physical, chemical, and structural properties of semiconductor surface. Optical, atomic force and scanning electron microscopy techniques as well as energy dispersive X-ray spectroscopy, X-ray diffraction and photoresponse spectroscopy were used. The experimental study demonstrates the microstructure formation as well as a change of the chemical composition at the silicon surface. It was found that a significant rise in value and expansion of the spectral range of photosensitivity take place after cavitation treatment. The photoresponse of about 2.0 eV can be connected with the formation of Si-rich SiNx compound inside the ultrasonically structured region of Si. The obtained value of the refractive index confirms this assumption.",

keywords = "Dendritic structure, Silicon, Strain engineering, Ultrasonic cavitation",

author = "Savkina, {R. K.} and Smirnov, {A. B.} and T. Kryshtab and A. Kryvko",

year = "2015",

month = jun,

day = "3",

doi = "10.1016/j.mssp.2015.02.066",

language = "Ingl{\'e}s",

volume = "37",

pages = "179--184",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

}

TY - JOUR

T1 - Sonosynthesis of microstructures array for semiconductor photovoltaics

AU - Savkina, R. K.

AU - Smirnov, A. B.

AU - Kryshtab, T.

AU - Kryvko, A.

PY - 2015/6/3

Y1 - 2015/6/3

N2 - The properties of the silicon samples subjected to cavitation impacts have been studied. It was shown that high-intensity (15 W/cm2) and high-frequency (1-6 MHz) sonication of silicon samples in the liquid nitrogen induces changes of the physical, chemical, and structural properties of semiconductor surface. Optical, atomic force and scanning electron microscopy techniques as well as energy dispersive X-ray spectroscopy, X-ray diffraction and photoresponse spectroscopy were used. The experimental study demonstrates the microstructure formation as well as a change of the chemical composition at the silicon surface. It was found that a significant rise in value and expansion of the spectral range of photosensitivity take place after cavitation treatment. The photoresponse of about 2.0 eV can be connected with the formation of Si-rich SiNx compound inside the ultrasonically structured region of Si. The obtained value of the refractive index confirms this assumption.

AB - The properties of the silicon samples subjected to cavitation impacts have been studied. It was shown that high-intensity (15 W/cm2) and high-frequency (1-6 MHz) sonication of silicon samples in the liquid nitrogen induces changes of the physical, chemical, and structural properties of semiconductor surface. Optical, atomic force and scanning electron microscopy techniques as well as energy dispersive X-ray spectroscopy, X-ray diffraction and photoresponse spectroscopy were used. The experimental study demonstrates the microstructure formation as well as a change of the chemical composition at the silicon surface. It was found that a significant rise in value and expansion of the spectral range of photosensitivity take place after cavitation treatment. The photoresponse of about 2.0 eV can be connected with the formation of Si-rich SiNx compound inside the ultrasonically structured region of Si. The obtained value of the refractive index confirms this assumption.

KW - Dendritic structure

KW - Silicon

KW - Strain engineering

KW - Ultrasonic cavitation

UR - http://www.scopus.com/inward/record.url?scp=84930276056&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2015.02.066

DO - 10.1016/j.mssp.2015.02.066

M3 - Artículo

AN - SCOPUS:84930276056

SN - 1369-8001

VL - 37

SP - 179

EP - 184

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

ER -

Sonosynthesis of microstructures array for semiconductor photovoltaics

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Keywords

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