Size dependent photoluminescence of SiC nanocrystals

M. Morales Rodriguez; A. Díaz Cano; T. V. Torchynska; G. Polupan; S. Ostapenko

doi:10.1016/j.jnoncrysol.2007.09.017

Size dependent photoluminescence of SiC nanocrystals

M. Morales Rodriguez, A. Díaz Cano, T. V. Torchynska, G. Polupan, S. Ostapenko

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The paper presents the results of porous SiC study using photoluminescence and scanning electronic microscopy. It is shown that the intensity of defect-related PL bands (2.08, 2.27, 2.44 and 2.63 eV) increases monotonically with the rise of PSiC thickness from 2.1 up to 12.0 μm. These luminescence centers are assigned to surface defects which appear at the PSiC etching process. Photoluminescence intensity stimulation for surface defects is attributed to rise of defect concentrations with increasing of porous layer thickness and to realization of the hot carrier ballistic mechanism at surface defect excitation. Intensity enhancement for exciton-related PL bands (2.79, 2.98 and 3.26 eV ) is attributed to increasing the exciton recombination rate as result of exciton weak confinement in big size SiC NCs of different polytypes (6H-PSiC with inclusions of 15R- and 4H-PSiC).

Original language	English
Pages (from-to)	2272-2275
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	354
Issue number	19-25
DOIs	https://doi.org/10.1016/j.jnoncrysol.2007.09.017
State	Published - 1 May 2008

Keywords

Luminescence
Nanocrystals
Optical spectroscopy
SEM S100
Scanning electron microscopy

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10.1016/j.jnoncrysol.2007.09.017

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title = "Size dependent photoluminescence of SiC nanocrystals",

abstract = "The paper presents the results of porous SiC study using photoluminescence and scanning electronic microscopy. It is shown that the intensity of defect-related PL bands (2.08, 2.27, 2.44 and 2.63 eV) increases monotonically with the rise of PSiC thickness from 2.1 up to 12.0 μm. These luminescence centers are assigned to surface defects which appear at the PSiC etching process. Photoluminescence intensity stimulation for surface defects is attributed to rise of defect concentrations with increasing of porous layer thickness and to realization of the hot carrier ballistic mechanism at surface defect excitation. Intensity enhancement for exciton-related PL bands (2.79, 2.98 and 3.26 eV ) is attributed to increasing the exciton recombination rate as result of exciton weak confinement in big size SiC NCs of different polytypes (6H-PSiC with inclusions of 15R- and 4H-PSiC).",

keywords = "Luminescence, Nanocrystals, Optical spectroscopy, SEM S100, Scanning electron microscopy",

author = "{Morales Rodriguez}, M. and {D{\'i}az Cano}, A. and Torchynska, {T. V.} and G. Polupan and S. Ostapenko",

note = "Funding Information: The work was supported by SIP-IPN, Mexico. Authors would like to thank Dr. M. Mynbaeva from Ioffe Institute, St. Petersburg, Russia, for preparation of porous SiC layers.",

year = "2008",

month = may,

day = "1",

doi = "10.1016/j.jnoncrysol.2007.09.017",

language = "Ingl{\'e}s",

volume = "354",

pages = "2272--2275",

journal = "Journal of Non-Crystalline Solids",

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TY - JOUR

T1 - Size dependent photoluminescence of SiC nanocrystals

AU - Morales Rodriguez, M.

AU - Díaz Cano, A.

AU - Torchynska, T. V.

AU - Polupan, G.

AU - Ostapenko, S.

N1 - Funding Information: The work was supported by SIP-IPN, Mexico. Authors would like to thank Dr. M. Mynbaeva from Ioffe Institute, St. Petersburg, Russia, for preparation of porous SiC layers.

PY - 2008/5/1

Y1 - 2008/5/1

N2 - The paper presents the results of porous SiC study using photoluminescence and scanning electronic microscopy. It is shown that the intensity of defect-related PL bands (2.08, 2.27, 2.44 and 2.63 eV) increases monotonically with the rise of PSiC thickness from 2.1 up to 12.0 μm. These luminescence centers are assigned to surface defects which appear at the PSiC etching process. Photoluminescence intensity stimulation for surface defects is attributed to rise of defect concentrations with increasing of porous layer thickness and to realization of the hot carrier ballistic mechanism at surface defect excitation. Intensity enhancement for exciton-related PL bands (2.79, 2.98 and 3.26 eV ) is attributed to increasing the exciton recombination rate as result of exciton weak confinement in big size SiC NCs of different polytypes (6H-PSiC with inclusions of 15R- and 4H-PSiC).

AB - The paper presents the results of porous SiC study using photoluminescence and scanning electronic microscopy. It is shown that the intensity of defect-related PL bands (2.08, 2.27, 2.44 and 2.63 eV) increases monotonically with the rise of PSiC thickness from 2.1 up to 12.0 μm. These luminescence centers are assigned to surface defects which appear at the PSiC etching process. Photoluminescence intensity stimulation for surface defects is attributed to rise of defect concentrations with increasing of porous layer thickness and to realization of the hot carrier ballistic mechanism at surface defect excitation. Intensity enhancement for exciton-related PL bands (2.79, 2.98 and 3.26 eV ) is attributed to increasing the exciton recombination rate as result of exciton weak confinement in big size SiC NCs of different polytypes (6H-PSiC with inclusions of 15R- and 4H-PSiC).

KW - Luminescence

KW - Nanocrystals

KW - Optical spectroscopy

KW - SEM S100

KW - Scanning electron microscopy

UR - http://www.scopus.com/inward/record.url?scp=42649107475&partnerID=8YFLogxK

U2 - 10.1016/j.jnoncrysol.2007.09.017

DO - 10.1016/j.jnoncrysol.2007.09.017

M3 - Artículo

SN - 0022-3093

VL - 354

SP - 2272

EP - 2275

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 19-25

ER -

Size dependent photoluminescence of SiC nanocrystals

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Keywords

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