Simulation analysis of Cd1-xZnxS/Sb2(Se1-xSx)3 solar cells with n-i-p structure

M. M. Nicolás-Marín; F. Ayala-Mato; O. Vigil-Galán; Maykel Courel

doi:10.1016/j.solener.2021.05.092

Simulation analysis of Cd_1-xZn_xS/Sb₂(Se_1-xS_x)₃ solar cells with n-i-p structure

M. M. Nicolás-Marín, F. Ayala-Mato, O. Vigil-Galán, Maykel Courel

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

In this work, the use of Cd_1-xZn_xS ternary compound as an alternative ETL layer to CdS in solar cells with FTO/CdS/Sb₂(Se_1-xS_x)₃/spiro-OMeTAD/Au structure is evaluated for the first time. Numerical calculations on Sb₂(Se_1-xS_x)₃ solar cells with CdS and Cd_1-xZn_xS as ETL layers are performed for comparison. Experimental data reported for CdS/Sb₂(Se_1-xS_x)₃ solar cell are reproduced with good agreement, thereby validating our model. A solar cell efficiency enhancement from 10.0% to 13.3% is found with the use of a Cd_1-xZn_xS layer with a Zn concentration of 0.4 and a thickness of 70 nm. The impact of defects at Cd_1-xZn_xS/Sb₂(Se_1-xS_x)₃ and Sb₂(Se_1-xS_x)₃/spiro-OMeTAD interfaces and Sb₂(Se_1-xS_x)₃ bulk on solar cell behavior is evaluated. In particular, we found that defects at Cd_1-xZn_xS/Sb₂(Se_1-xS_x)₃ interface stand as the main limiting factor of this technology. Finally, an efficiency of 14.8% is demonstrated with the reduction of interface defects to values of about 10¹¹ cm⁻². Under this condition, more attention should be paid to reducing the effect of series and shunt resistances in order to increase solar cell efficiency from 14.8% to 17.4%.

Translated title of the contribution	Análisis de simulación de Cd 1-x Zn x S/Sb 2 (Se 1-x S x ) 3 celdas solares con estructura nip
Original language	English
Pages (from-to)	245-252
Number of pages	8
Journal	Solar Energy
Volume	224
DOIs	https://doi.org/10.1016/j.solener.2021.05.092
State	Published - Aug 2021

Keywords

CdZnS, compound
SCAPS
Sb(SeS) solar cells
Solar cell modeling

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.solener.2021.05.092

Cite this

@article{526a9414139147589e29bb0ba7c68314,

title = "Simulation analysis of Cd1-xZnxS/Sb2(Se1-xSx)3 solar cells with n-i-p structure",

abstract = "In this work, the use of Cd1-xZnxS ternary compound as an alternative ETL layer to CdS in solar cells with FTO/CdS/Sb2(Se1-xSx)3/spiro-OMeTAD/Au structure is evaluated for the first time. Numerical calculations on Sb2(Se1-xSx)3 solar cells with CdS and Cd1-xZnxS as ETL layers are performed for comparison. Experimental data reported for CdS/Sb2(Se1-xSx)3 solar cell are reproduced with good agreement, thereby validating our model. A solar cell efficiency enhancement from 10.0% to 13.3% is found with the use of a Cd1-xZnxS layer with a Zn concentration of 0.4 and a thickness of 70 nm. The impact of defects at Cd1-xZnxS/Sb2(Se1-xSx)3 and Sb2(Se1-xSx)3/spiro-OMeTAD interfaces and Sb2(Se1-xSx)3 bulk on solar cell behavior is evaluated. In particular, we found that defects at Cd1-xZnxS/Sb2(Se1-xSx)3 interface stand as the main limiting factor of this technology. Finally, an efficiency of 14.8% is demonstrated with the reduction of interface defects to values of about 1011 cm−2. Under this condition, more attention should be paid to reducing the effect of series and shunt resistances in order to increase solar cell efficiency from 14.8% to 17.4%.",

keywords = "CdZnS, compound, SCAPS, Sb(SeS) solar cells, Solar cell modeling",

author = "Nicol{\'a}s-Mar{\'i}n, {M. M.} and F. Ayala-Mato and O. Vigil-Gal{\'a}n and Maykel Courel",

note = "Publisher Copyright: {\textcopyright} 2021 International Solar Energy Society",

year = "2021",

month = aug,

doi = "10.1016/j.solener.2021.05.092",

language = "Ingl{\'e}s",

volume = "224",

pages = "245--252",

journal = "Solar Energy",

issn = "0038-092X",

}

TY - JOUR

T1 - Simulation analysis of Cd1-xZnxS/Sb2(Se1-xSx)3 solar cells with n-i-p structure

AU - Nicolás-Marín, M. M.

AU - Ayala-Mato, F.

AU - Vigil-Galán, O.

AU - Courel, Maykel

PY - 2021/8

Y1 - 2021/8

N2 - In this work, the use of Cd1-xZnxS ternary compound as an alternative ETL layer to CdS in solar cells with FTO/CdS/Sb2(Se1-xSx)3/spiro-OMeTAD/Au structure is evaluated for the first time. Numerical calculations on Sb2(Se1-xSx)3 solar cells with CdS and Cd1-xZnxS as ETL layers are performed for comparison. Experimental data reported for CdS/Sb2(Se1-xSx)3 solar cell are reproduced with good agreement, thereby validating our model. A solar cell efficiency enhancement from 10.0% to 13.3% is found with the use of a Cd1-xZnxS layer with a Zn concentration of 0.4 and a thickness of 70 nm. The impact of defects at Cd1-xZnxS/Sb2(Se1-xSx)3 and Sb2(Se1-xSx)3/spiro-OMeTAD interfaces and Sb2(Se1-xSx)3 bulk on solar cell behavior is evaluated. In particular, we found that defects at Cd1-xZnxS/Sb2(Se1-xSx)3 interface stand as the main limiting factor of this technology. Finally, an efficiency of 14.8% is demonstrated with the reduction of interface defects to values of about 1011 cm−2. Under this condition, more attention should be paid to reducing the effect of series and shunt resistances in order to increase solar cell efficiency from 14.8% to 17.4%.

AB - In this work, the use of Cd1-xZnxS ternary compound as an alternative ETL layer to CdS in solar cells with FTO/CdS/Sb2(Se1-xSx)3/spiro-OMeTAD/Au structure is evaluated for the first time. Numerical calculations on Sb2(Se1-xSx)3 solar cells with CdS and Cd1-xZnxS as ETL layers are performed for comparison. Experimental data reported for CdS/Sb2(Se1-xSx)3 solar cell are reproduced with good agreement, thereby validating our model. A solar cell efficiency enhancement from 10.0% to 13.3% is found with the use of a Cd1-xZnxS layer with a Zn concentration of 0.4 and a thickness of 70 nm. The impact of defects at Cd1-xZnxS/Sb2(Se1-xSx)3 and Sb2(Se1-xSx)3/spiro-OMeTAD interfaces and Sb2(Se1-xSx)3 bulk on solar cell behavior is evaluated. In particular, we found that defects at Cd1-xZnxS/Sb2(Se1-xSx)3 interface stand as the main limiting factor of this technology. Finally, an efficiency of 14.8% is demonstrated with the reduction of interface defects to values of about 1011 cm−2. Under this condition, more attention should be paid to reducing the effect of series and shunt resistances in order to increase solar cell efficiency from 14.8% to 17.4%.

KW - CdZnS, compound

KW - SCAPS

KW - Sb(SeS) solar cells

KW - Solar cell modeling

UR - http://www.scopus.com/inward/record.url?scp=85107792008&partnerID=8YFLogxK

U2 - 10.1016/j.solener.2021.05.092

DO - 10.1016/j.solener.2021.05.092

M3 - Artículo

AN - SCOPUS:85107792008

SN - 0038-092X

VL - 224

SP - 245

EP - 252

JO - Solar Energy

JF - Solar Energy

ER -