@inproceedings{30f52060bf96413ca12fd54f83172a71,
title = "Silicon carbide PiN physically-based model implemented in the Pspice circuit simulator",
abstract = "The main novelty in this paper is modeling with Pspice the real stored charge inside SiC PiN diodes depending on the working regime of the device (turn-on, on-state, and turn-off). The developed model is based on the adequate calculation of the ambipolar length (L) as a function of the charge injected to the N- region, which allows finding an analytical solution for the ambipolar diffusion equation (ADE). In special during the turn-off, the carrier concentration was modeled in three different regions. The physical-based model allows predicting dynamic and static behaviors of the SiC PiN diode.",
keywords = "Modeling, Pspice, Silicon carbide",
author = "Gonz{\'a}lez, {L. H.} and A. Claudio and Rodr{\'i}guez, {M. A.} and M. Ponce and P. Rosales and C. Zu{\~n}iga-I",
year = "2009",
language = "Ingl{\'e}s",
isbn = "9781424444328",
series = "2009 13th European Conference on Power Electronics and Applications, EPE '09",
booktitle = "2009 13th European Conference on Power Electronics and Applications, EPE '09",
note = "2009 13th European Conference on Power Electronics and Applications, EPE '09 ; Conference date: 08-09-2009 Through 10-09-2009",
}