SiGe heterojunction bipolar transistor issues towards high cryogenic performances

E. Ramirez-Garcia; N. Zerounian; P. Crozat; M. Enciso-Aguilar; P. Chevalier; A. Chantre; F. Aniel

doi:10.1016/j.cryogenics.2008.11.006

SiGe heterojunction bipolar transistor issues towards high cryogenic performances

E. Ramirez-Garcia, N. Zerounian, P. Crozat, M. Enciso-Aguilar, P. Chevalier, A. Chantre, F. Aniel

Escuela Superior de Ingeniería Mecánica y Eléctrica (ESIME), Unidad Zacatenco

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The performances increase at low temperature make the SiGe HBT a masterpiece for cryogenic circuits. The time-progressive enhancement of f_T and f_MAX toward the THz frequency at room and at cryogenic temperatures is presented along with STMicroelectronics and IBM successive HBTs generations. The influence of the Ge content and graduality into the base is discussed, highlighting the keys for best high-frequency cryogenic operation. This is shown with eight different cases and addressed on f_T, f_MAX, the transit time, the minimum noise figure and the equivalent noise resistance.

Original language	English
Pages (from-to)	620-625
Number of pages	6
Journal	Cryogenics
Volume	49
Issue number	11
DOIs	https://doi.org/10.1016/j.cryogenics.2008.11.006
State	Published - Nov 2009

Keywords

A. Semiconductors
D. Cryoelectronics
F. RF applications

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10.1016/j.cryogenics.2008.11.006

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title = "SiGe heterojunction bipolar transistor issues towards high cryogenic performances",

abstract = "The performances increase at low temperature make the SiGe HBT a masterpiece for cryogenic circuits. The time-progressive enhancement of fT and fMAX toward the THz frequency at room and at cryogenic temperatures is presented along with STMicroelectronics and IBM successive HBTs generations. The influence of the Ge content and graduality into the base is discussed, highlighting the keys for best high-frequency cryogenic operation. This is shown with eight different cases and addressed on fT, fMAX, the transit time, the minimum noise figure and the equivalent noise resistance.",

keywords = "A. Semiconductors, D. Cryoelectronics, F. RF applications",

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T1 - SiGe heterojunction bipolar transistor issues towards high cryogenic performances

AU - Ramirez-Garcia, E.

AU - Zerounian, N.

AU - Crozat, P.

AU - Enciso-Aguilar, M.

AU - Chevalier, P.

AU - Chantre, A.

AU - Aniel, F.

PY - 2009/11

Y1 - 2009/11

N2 - The performances increase at low temperature make the SiGe HBT a masterpiece for cryogenic circuits. The time-progressive enhancement of fT and fMAX toward the THz frequency at room and at cryogenic temperatures is presented along with STMicroelectronics and IBM successive HBTs generations. The influence of the Ge content and graduality into the base is discussed, highlighting the keys for best high-frequency cryogenic operation. This is shown with eight different cases and addressed on fT, fMAX, the transit time, the minimum noise figure and the equivalent noise resistance.

AB - The performances increase at low temperature make the SiGe HBT a masterpiece for cryogenic circuits. The time-progressive enhancement of fT and fMAX toward the THz frequency at room and at cryogenic temperatures is presented along with STMicroelectronics and IBM successive HBTs generations. The influence of the Ge content and graduality into the base is discussed, highlighting the keys for best high-frequency cryogenic operation. This is shown with eight different cases and addressed on fT, fMAX, the transit time, the minimum noise figure and the equivalent noise resistance.

KW - A. Semiconductors

KW - D. Cryoelectronics

KW - F. RF applications

UR - http://www.scopus.com/inward/record.url?scp=70449532494&partnerID=8YFLogxK

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DO - 10.1016/j.cryogenics.2008.11.006

M3 - Artículo

SN - 0011-2275

VL - 49

SP - 620

EP - 625

JO - Cryogenics

JF - Cryogenics

IS - 11

ER -

SiGe heterojunction bipolar transistor issues towards high cryogenic performances

Abstract

Keywords

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