Shell model of semiconductor quantum dots

P. G. Eliseev; D. P. Popescu; T. V. Torchynska; A. Stintz; K. J. Malloy

doi:10.1117/12.540313

Shell model of semiconductor quantum dots

P. G. Eliseev, D. P. Popescu, T. V. Torchynska, A. Stintz, K. J. Malloy

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Conference article › peer-review

Abstract

Model consideration is given to explain observed multi-shell emission spectra from InAs quantum dots embedded in GaAs or InGaAs. The shell model is based on the quantization of kinetic energy of lateral motion of carrier in the dot. 2-D oscillator is calculated on the basis of effective mass approximation. Profiles of inter-level separation are classified into categories that are connected with the lateral confining potential. Comparison is carried with experimental data on InAs/InGaAs quantum dot structures of the DWELL type (dot-in-a-well).

Translated title of the contribution	Modelo de capa de puntos cuánticos de semiconductores
Original language	English
Pages (from-to)	46-53
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5349
DOIs	https://doi.org/10.1117/12.540313
State	Published - 2004
Event	Physics and Simulation of Optoelectronic Devices XII - San Jose, CA, United States Duration: 26 Jan 2004 → 29 Jan 2004

Keywords

Energy spectra
Modeling
Multi-shell emission
Semiconductor quantum dots

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title = "Shell model of semiconductor quantum dots",

abstract = "Model consideration is given to explain observed multi-shell emission spectra from InAs quantum dots embedded in GaAs or InGaAs. The shell model is based on the quantization of kinetic energy of lateral motion of carrier in the dot. 2-D oscillator is calculated on the basis of effective mass approximation. Profiles of inter-level separation are classified into categories that are connected with the lateral confining potential. Comparison is carried with experimental data on InAs/InGaAs quantum dot structures of the DWELL type (dot-in-a-well).",

keywords = "Energy spectra, Modeling, Multi-shell emission, Semiconductor quantum dots",

author = "Eliseev, {P. G.} and Popescu, {D. P.} and Torchynska, {T. V.} and A. Stintz and Malloy, {K. J.}",

year = "2004",

doi = "10.1117/12.540313",

language = "Ingl{\'e}s",

volume = "5349",

pages = "46--53",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Physics and Simulation of Optoelectronic Devices XII ; Conference date: 26-01-2004 Through 29-01-2004",

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TY - JOUR

T1 - Shell model of semiconductor quantum dots

AU - Eliseev, P. G.

AU - Popescu, D. P.

AU - Torchynska, T. V.

AU - Stintz, A.

AU - Malloy, K. J.

PY - 2004

Y1 - 2004

N2 - Model consideration is given to explain observed multi-shell emission spectra from InAs quantum dots embedded in GaAs or InGaAs. The shell model is based on the quantization of kinetic energy of lateral motion of carrier in the dot. 2-D oscillator is calculated on the basis of effective mass approximation. Profiles of inter-level separation are classified into categories that are connected with the lateral confining potential. Comparison is carried with experimental data on InAs/InGaAs quantum dot structures of the DWELL type (dot-in-a-well).

AB - Model consideration is given to explain observed multi-shell emission spectra from InAs quantum dots embedded in GaAs or InGaAs. The shell model is based on the quantization of kinetic energy of lateral motion of carrier in the dot. 2-D oscillator is calculated on the basis of effective mass approximation. Profiles of inter-level separation are classified into categories that are connected with the lateral confining potential. Comparison is carried with experimental data on InAs/InGaAs quantum dot structures of the DWELL type (dot-in-a-well).

KW - Energy spectra

KW - Modeling

KW - Multi-shell emission

KW - Semiconductor quantum dots

UR - http://www.scopus.com/inward/record.url?scp=3543082193&partnerID=8YFLogxK

U2 - 10.1117/12.540313

DO - 10.1117/12.540313

M3 - Artículo de la conferencia

AN - SCOPUS:3543082193

SN - 0277-786X

VL - 5349

SP - 46

EP - 53

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Physics and Simulation of Optoelectronic Devices XII

Y2 - 26 January 2004 through 29 January 2004

ER -

Shell model of semiconductor quantum dots

Abstract

Keywords

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