@inproceedings{ba7364d1f2804e88a7fd0055a40f2422,
title = "Self-heating effects on strained Si/SiGe n-HFETs",
abstract = "We report an investigation on self heating effects on SiGe based HFET for the first time. Si/SiGe n- HFETs exhibit excellent high frequency performance with fr- of 90 GHz [1) (105 GHz |2]), fMAX of 188 GHz (225 GHz) J3] at 300 K (50 K), low noise figure NFMIN of 0.3 dB at 2.5GHz at 300 K [4|. These figures of merit reflect the superior transport properties of the SiGe based heterosytem as compared w ith bulk Si devices. However some detrimental effects such as parasitic resistances or electrostatic parasitic capacitances as well as self heating effects can mask their strained enhanced intrinsic transport properties. In this communication the last point is addressed through experimental data and 2-D numeric simulations results. Self-heating influence on device performance is pointed out and alternatives to overwhelm them are presented in terms of a device performance comparison between SiGe HFETs prepared on thin and thick virtual substrates (VS).",
author = "Mauro Enciso and Frederic Aniel and Laurent Giguerre and Thomas Hackbarth and Hans Herzog and Ulf K{\"o}nig and B. H{\"o}llander and Siegfried Mantl.",
year = "2003",
doi = "10.1109/ISDRS.2003.1272042",
language = "Ingl{\'e}s",
series = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "162--163",
booktitle = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",
address = "Estados Unidos",
note = "International Semiconductor Device Research Symposium, ISDRS 2003 ; Conference date: 10-12-2003 Through 12-12-2003",
}